Shimadzu Corporation

Shimadzu Co.

Rui Kato

Hiroomi Goto

Yuzo Nagumo

Fumiaki Otera

Hideaki Katsu

A gas analyzer is provided, capable of measuring specific gas amount information within a measurement target gas in which pressure varies greatly. The gas analyzer includes a calculation member for calculating specific gas amount information of the nth cycle, a gas pressure change amount calculation unit for calculating an amount of gas pressure change at each time, and a correction signal creation member for generating a time changing, corrected light intensity at each wavelength &#x3bd;, by performing a fitting process using the time-changing intensity over a long time period in a time zone in which the amount of gas pressure change is small but using the time-changing intensity over a short time period in a time zone in which the amount of gas pressure change is large. The calculation member generates a light intensity change of the measurement light in the predetermined wavelength range of &#x3bd;1 to &#x3bd;2 of the nth cycle by using the time changing, corrected light intensity at each wavelength &#x3bd;, and calculates the specified gas amount information for the nth cycle.

Gas analyzer

A system including an index assigning section estimating the thickness of a thin film based on the intensity of light reflected on a substrate and a theoretical formula expressing a relationship between the thickness of the thin film and the intensity of an interference light when the spectrum is obtained for the first time, and assigning indexes for each candidate value for the layer thickness; a layer thickness wide-range estimating section estimating the layer thickness within the range of the value of a layer thickness wide-range estimation width including the previously estimated value of the layer thickness based on the theoretical formula; a selecting section selecting an index from the indexes; a determining section determining a layer thickness wide-range estimation result; and a layer thickness determining section determining the thickness of the thin film based on the theoretical formula after calculating the layer thickness wide-range estimation result.

Surface processing progress monitoring system

A thickness monitoring device capable of performing thickness measurement of an object of measurement in real time even when using a relatively narrow band light source. This etching monitoring device (thickness monitoring device) includes a light source which produces measurement light having a predetermined wavelength bandwidth; an array detector which detects, for each wavelength, interference light of measurement light reflected from mask, whereof the thickness changes over time; and data processing unit which computes the thickness of the mask based on change over time of a plurality of single-wavelength components of the interference light detected by the array detector.

Thickness monitoring device, etching depth monitoring device and thickness monitoring method

A measurement light having a predetermined wavelength bandwidth from a light source is radiated onto the structure to be measured in a specimenlight reflected from a first plane and second plane of the structure to be measured is made to interfere in an optical fiber, and a spectrum of the interference light is generated. This interference light spectrum is acquired by a spectrometric unit at two time points separated in time, and in data processing unit, absolute difference area computation unit determines the absolute difference area of the difference spectrum. This absolute difference area changes periodically each time the dimension of the structure to be measured changes by &#x3bb;/4, making it possible to determine the dimension of the structure to be measured based on that change.

Depth of hole measurement by subtracting area of two spectra separated by time

An etching monitor device capable of high precision measurement in the presence of a mask region capable of producing interference. The device including an interference optical system which acquires reflected interference light containing three interference component signals, which are due respectively to optical path differences of reflected light between three sets of surfaces. The three interference component signals include a first interference based on an optical path between light reflected off of a mask surface and light reflected off of a top surface of the substrate, a second interference based on an optical path between the light reflected off of the top surface of the substrate and light reflected off of a surface to be etched, and a third interference based on an optical path between the light reflected off of the surface to be etched and the light reflected off of the mask surface.

Growing community of inventors

Kyoto, Japan

Rui Kato