Stella Chemifa Corporation

Tohoku University

Rui Hasebe

Tadahiro Ohmi

Akinobu Teramoto

Hirohisa Kikuyama

Tetsuo Nishida

Masahide Waki

Hideki Nakashima

Masayuki Miyashita

Megumi Tomisaki

Takanobu Kujime

Hitoshi Tsurumaru

Kanenori Ito

Keiichi Nii

Masanori Uraya

Hiroya Yamamoto

Provided are a liquid dispersion of fluoride particles, which has low viscosity and excellent dispersibility, and is suitable for producing an optical film such as an antireflection film; a method for producing the same; and an optical film using the same. The liquid dispersion of fluoride particles according to the present invention is that in which particles of a fluoride represented by the chemical formula ACF(wherein A represents sodium or potassium, C represents silicon or boron, x is 1 or 2, and y is 4 or 6) are dispersed in an aprotic organic solvent having a relative permittivity of 5 to 40, and the optical film according to the present invention is produced by using the liquid dispersion of fluoride particles.

Liquid dispersion of fluoride particles and method for producing same, and optical film

Disclosed is a method for cleaning a semiconductor substrate that can solve a problem of a conventional cleaning method which should include at least five steps for cleaning a substrate such as a semiconductor substrate. The method for cleaning a semiconductor substrate comprises a first step of cleaning a substrate with ultrapure water containing ozone, a second step of cleaning the substrate with ultrapure water containing a surfactant, and a third step of removing an organic compound derived from the surfactant, with a cleaning liquid containing ultrapure water and 2-propanol. After the third step, plasma of noble gas such as krypton is applied to the substrate to further remove the organic compound derived from the surfactant.

Method for manufacturing semiconductor device and method for cleaning semiconductor substrate

A fine treatment agent according to the present invention is a fine treatment agent for the fine treatment of a multilayer film, including a tungsten film and a silicon oxide film comprising at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, a fine treatment agent which makes fine treatment on a multilayer film, including a tungsten film and a silicon oxide film, possible by controlling the etching rate and a fine treatment method using the same can be provided.

Fine treatment agent and fine treatment method using same

Growing community of inventors

Sakai, Japan

Rui Hasebe