Applied Materials, Inc.

Rui Cheng

Abhijit Basu Mallick

Karthik Janakiraman

Pramit Manna

Zubin Huang

Diwakar N Kedlaya

Srinivas Gandikota

Krishna Nittala

Aykut Aydin

Yi Yang

Yihong Chen

Shishi Jiang

Ziqing Duan

Takehito Koshizawa

Bo Qi

Robert Jan Visser

Susmit Singha Roy

Hidetaka Oshio

Ludovic Godet

Anchuan Wang

Kelvin Chan

Jian Li

Mukund Srinivasan

Fei C Wang

Zihui Li

Erica Chen

Srinivas Guggilla

Meenakshi Gupta

Nitin K Ingle

Er-Xuan Ping

Deenesh Padhi

Gaurav Thareja

Xin Liu

Sanjay S Natarajan

Praket Prakash Jha

Swaminathan T Srinivasan

Tomohiko Kitajima

Jaesoo Ahn

Thomas Jongwan Kwon

Venkata Sharat Chandra Parimi

Gene S Lee

Yong Wu

Satish Radhakrishnan

Yung-chen Lin

Badri N Ramamurthi

Huiyuan Wang

Tejinder Singh

Harry S Whitesell

Venkatanarayana Shankaramurthy

Anton Baryshnikov

Gautam K Hemani

Chao Li

Tzu-shun Yang

Juan Carlos Rocha-Alvarez

Shashank Sharma

Paul Brillhart

Prashant Kumar Kulshreshtha

Jingmei Liang

Kurtis Leschkies

Wei V Tang

Vinay K Prabhakar

Umesh M Kelkar

Sarah Michelle Bobek

Hang Yu

Rajesh Prasad

Sanjay G Kamath

Jinrui Guo

Nitin Pathak

Milind Gadre

Chia-Ling Kao

Fei Wang

Dong H Lee

Russell Chin Yee Teo

Chuanxi Yang

Truong Van Nguyen

Byung Seok Kwon

Xiawan Yang

Chen-an Chen

Qi Gao

Ruiyun Huang

Shan Tang

Euhngi Lee

Alicia J Lustgraaf

Brett Spaulding

Qinghua Zhao

Manjunath Veerappa Chobari Patil

Menghui Li

Ming-Yuan Chuang

Susumu Shinohara

Juan Guo

Qu Jin

Honggun Kim

Embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. In an embodiment, a spacer-defined patterning process is provided. The process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon-containing species, the silicon-containing species having a higher molecular weight than SiH. The process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.

Processes for depositing SiB films

Exemplary methods of semiconductor processing may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by a first amount of hydrogen incorporation. The methods may include performing a beamline ion implantation process or plasma doping process on the layer of amorphous silicon. The methods may include removing hydrogen from the layer of amorphous silicon to a second amount of hydrogen incorporation less than the first amount of hydrogen incorporation.

Ion implantation for reduced hydrogen incorporation in amorphous silicon

Capacitor devices containing silicon boron nitride with high boron concentration are provided. In one or more examples, a capacitor device is provided and contains a stopper layer containing silicon boron nitride and disposed on a substrate, a dielectric layer disposed on the stopper layer, vias formed within the dielectric layer and the stopper layer, metal contacts disposed on bottoms of the vias, a nitride barrier layer containing a metal nitride material and disposed on walls of the vias and disposed on the metal contacts, and an oxide layer disposed within the vias on the nitride barrier layer, wherein the oxide layer contains one or more holes or voids formed therein. The silicon boron nitride contains about 18 atomic percent (at %) to about 50 at % of boron.

PECVD of SiBN thin films with low leakage current

Exemplary temperature modulation methods may include delivering a gas through a purge line extending within a substrate support. The gas may be directed to a backside surface of the substrate support opposite a substrate support surface. The purge line may extend along a central axis of a shaft, the shaft being hermetically sealed with the substrate support. The substrate support may be characterized by a center and a circumferential edge. A first end of the purge line may be fixed at a first distance from the backside surface of the substrate support. The methods may include flowing the gas at a first flow rate via a flow pathway to remove heat from the substrate support to achieve a desired substrate support temperature profile.

Systems and methods for substrate support temperature control

Method for depositing amorphous silicon materials are provide and include generating a plasma within a plasma unit in fluid communication with a process chamber and flowing the plasma through an ion suppressor to produce an activated fluid containing reactive species and neutral species. The activated fluid either contains no ions or contains a lower concentration of ions than the plasma. The method further includes flowing the activated fluid into a first inlet of a dual channel showerhead within the process chamber and flowing a silicon precursor into a second inlet of the dual channel showerhead. Thereafter, the method includes flowing a mixture of the activated fluid and the silicon precursor out of the dual channel showerhead and forming an amorphous silicon layer on a substrate disposed in the process chamber.

Remote capacitively coupled plasma deposition of amorphous silicon

Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.

Integration processes utilizing boron-doped silicon materials

Methods for depositing film comprising cyclical exposure of a substrate surface to a precursor and a degas environment to remove gas evolved from the film. Some embodiments further comprise the incorporation poisoning the top of a feature to inhibit film growth at the top of the feature. Some embodiments further comprising etching a portion of the film deposited at the top of a feature between cycles to increase gap-fill uniformity.

Deposition of conformal and gap-fill amorphous silicon thin-films

Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.

Methods to eliminate of deposition on wafer bevel and backside

Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the Hmay be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the Hmay be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

Boron concentration tunability in boron-silicon films

In an embodiment, a method for forming features for semiconductor processing. A first mandrel and a second mandrel are formed on a substrate. A first spacer is formed along a first sidewall of the first mandrel, and a second spacer is formed along a second sidewall of the second mandrel. A gap is defined between the first spacer and the second spacer. The gap is filled by a gap-filling material. In some examples, the gap-filling material includes a doped silicon material. In some examples, the first spacer and the second spacer each include a doped silicon material.

Method for forming and patterning a layer and/or substrate

Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.

Seam removal in high aspect ratio gap-fill

Exemplary deposition methods may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the boron-containing precursor. The dopant-containing precursor may include a metal. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The doped-boron material may include greater than or about 80 at. % of boron in the doped-boron material.

Metal-doped boron films

Exemplary methods of semiconductor processing may include coupling a fluid conduit within a substrate support in a semiconductor processing chamber to a system foreline. The coupling may vacuum chuck a substrate with the substrate support. The methods may include flowing a gas into the fluid conduit. The methods may include maintaining a pressure between the substrate and the substrate support at a pressure higher than the pressure at the system foreline.

Processes for depositing sib films

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Santa Clara, CA, United States of America

Rui Cheng