Motorola Corporation

Ruey J Yu

Perry H Pelley

Scott G Nogle

Paul William Hollis

Renny Lee Eisele

Eugene J Van Scott

Alfred Larry Crouch

Kenneth W Jones

Daniel M McCarthy

Ray Chang

Karl L Wang

William L Martino, Jr

Alan Richard Bormann

John W Eagan

Fu T Liou

The application describes creatine or its derivatives, compositions comprising the same, and uses thereof for topical or systemic administration to treat pain, itch, or eczema, or inflammation associated with a cosmetic or medical condition, disorder or disease in a human subject, wherein the inflammation causes the pain, itch, or eczema. In addition, the application describes clinical use of these compounds and compositions which can reduce or eliminate erythema, edema and tissue distortions associated with inflammation.

Creatine, its derivatives, compositions and methods of use thereof

A method and circuit for optimally controlling memory array bit line precharge timing to increase memory frequency of operation by generating a precharge output (110) for memory array bit lines in response to the earliest asserted control input among precharge control inputs. A write precharge signal (218) early enables a write precharge operation by enabling the precharge signal (110) a delayed period after an enabling falling dock edge of clock (104), as indicated by a write precharge enable signal (210), and during a write cycle, as indicated by a write precharge trigger (212). Thereafter, a default precharge trigger (216) is enabled to ensure that write precharging operation continues for an extended and optimal duration. A read precharge trigger (214) enables precharging after a read operation by enabling the precharge signal (110) in close proximity to the disabling of read sense amplifiers within the memory array to enhance post-read precharging. Thereafter, the default precharge trigger (216), is enabled to ensure that the read precharging operation continues for an extended and optimal duration.

Method and circuit for controlling a precharge cycle of a memory device

Accurate delay testing of integrated circuits containing memory arrays embedded in combinational logic utilizes actual memory array timing. Actual memory timing signals provide the timing for bypassing the memory in SCAN Mode. The result is that simulated memory accesses during SCAN Mode testing have the same timing as actual memory accesses have during functional mode operation. Thus delay testing during SCAN Mode through paths containing both combinational logic and memory arrays accurately determines path delays.

Scan based path delay testing of integrated circuits containing embedded

Circuitry (20) and an associated an method of operation provides system data (30) and scan data (32) to a latch portion (42) of a data storage element in a reduced setup time period. For each data storage element, a system data transfer gate (22) provides system data (30) to a master latch portion (42) while a scan data transfer gate (24) provides scan data (32) to the master latch portion (42). The scan data (24) and system data transfer (22) gates minimize the set-up time required for data entering the data storage element. Scan chains incorporating the data storage elements include scan data input ports and scan data output ports as well as connections between data storage elements in an associated scan chain. A controller (26) operated by a scan enable signal (38) and a system clock (40) provide control signals to the system data transfer gate (22) and the scan data transfer gate (24) to cause the gates to selectively pass data. The controller 26 serves as a multiplexor function for scan data and system data, and serves a clocking loading minimizing function to speed the data path.

Scannable storage cell and method of operation

An ATD pulse generator circuit (20) provides an ATD pulse at CMOS logic levels in response to a single-ended ECL level input signal transition. An emitter-follower input portion (21), a differential amplifier (23), and emitter-follower portion (25) converts the single-ended input signal to intermediate level differential signals. P-channel transistors (51 and 52) receive the intermediate level differential signals and provide complementary CMOS level outputs signals. Cross-coupled delay portion (29) prevents the N-channel transistors (55 and 56) from switching on until after a delay, causing both of the CMOS level output signals to remain at logic high levels for a predetermined time. Cross-coupling the N-channel transistors (55 and 56) also results in reduced power consumption. A NAND gate (31) receives the logic high levels and provides a CMOS level ATD pulse, the duration of which is adjustable.

ATD pulse generator circuit with ECL to CMOS level conversion

A memory (30) includes input buffers (35, 38, 56), decoders (31, 32, 36), and a memory portion (34). The input buffers (35, 38, 56) include a delay circuit (82) which delays at least one transition of an input signal. The delay circuit (82) includes a compensation circuit (250) which compensates the delay circuit (82) for voltage, temperature, and processing variations. In one embodiment, the delay circuit (82) includes a CMOS inverter (102, 103) with an additional transistor (101) coupled between a source of an inverter transistor (102) and a corresponding power supply voltage. The compensation circuit (250) provides a bias voltage to bias a gate of the transistor (101) to determine the delay of the delay circuit (82). The compensation circuit (250) provides the bias voltage as that voltage which biases the transistor (101) to conduct a precision reference current.

Memory with compensation for voltage, temperature, and processing

A memory (20) has a read cycle and a write cycle. During the read cycle, differential data signals, corresponding to data provided by a selected memory cell, are superimposed on a first common mode voltage and provided to data output buffers (70-73). During the write cycle, differential data signals on read global data lines (61-62) are equalized at a second common mode voltage and data output buffers (70-73) are disabled. Output enable circuit (74) provides an output enable signal halfway between the first and second common mode voltages. Data output buffers (70-73) are enabled at the beginning of the read cycle when the differential data signals cross the output enable signal as they transition from the second common mode voltage to the first common mode voltage. Enabling data output buffers (70-73) in this way greatly relaxes output enable timing constraints.

Memory having output buffer enable by level comparison and method

An input buffer for translating TTL level signals to ECL level signals has a level shifter having a first and a second inupt transistor. The first input transistor receives the input signal and the second transistor receives a reference voltage. First and second transistor loads are coupled to the first and second transistors, respectively. Both the first and second loads are biased to the same saturation current. The saturation current is derived from a current source. The reference voltage is set at a voltage which is between the maximum voltage of a logic low of the input signal and the minimum voltage of a high of the input signal. The deferential level shifter develops a voltage differential which is converted to ECL level signals by a differential amplifier.

TTL to ECL input buffer

A BICMOS NAND gate has P channel transistors, N channel transistors, and NPN transistors. The NPN transistors and the P channel transistors combine to provide logic high drive which avoids having the comparatively slow P channel transistors tied together. The P channel transistors are combined with NPN transistors to avoid the accumulation of capacitance that must be driven by a P channel transistor as the number of inputs increases. This avoids the typical problem of having the P channel transistors having to drive more capacitance as the number of inputs increases.

BICMOS NAND gate

In integrated circuits which include both ECL and CMOS circuits, there is an ECL to CMOS translator which converts ECL logic levels to CMOS logic levels. To convert from ECL to CMOS levels, the ECL logic high is coupled to the base of an NPN transistor which provides a CMOS logic low. The ECL logic low is prevented from being coupled to the base of the NPN transistor. The CMOS logic high is obtained by an analogous second circuit which is responsive to a complementary ECL signal the output of which is coupled to a P channel transistor. The P channel transistor either provides the CMOS logic high output or is non-conductive.

ECL to CMOS translator

An integrated circuit has an input protection circuit coupled between an input pad and an input circuit. The input pad receives a signal provided externally from the integrated circuit. The input circuit is responsive to the signal provided externally from the integrated circuit. The input protection circuit provides protection against electrostatic discharge (ESD). The input protection circuit includes two polysilicon resistors in parallel in which one has a greater width than the other. The greater width resistor will be the first to open under ESD stress leaving the other resistor to still provide a signal path between the input pad and the input circuit.

Input protection for an integrated circuit

An integrated circuit comprises a chip containing electric circuits in a package with leads. The chip receives power via the leads. The leads have inductance so that when there is a change in current flow (di/dt) through a lead there is a voltage which is developed between the ends of the lead and the chip which can cause the chip to either malfunction or function poorly. The highest di/dt is generally by an output buffer that changes the logic state of its output. The typical output buffer has a pair of driver transistors that provide one of a logic high or logic low. The di/dt generated by these transistors in controlled by controlling the voltage on the gate of the transistor which is providing the particular logic state. This control reduces di/dt from that typically provided at the very beginning of a logic state transition but increases it over that typically provided immediately thereafter for the purpose of optimizing logic state transition speed for a given maximum di/dt. The control of the gate of the driver transistor is modulated by the output voltage itself.

Output buffer for improving di/dt

An integrated circuit which has serially connected clock drivers for generating sequential clock signals further includes test circuitry for testing for the occurence of the clock signals. The test circuitry includes a current source for each of the sequential clock signals each of which is enabled upon receiving its associated clock signal. Consequently, the current sources are sequentially enabled until a clock signal fails to occur at which time no more clock signals occur so that no more current sources are enabled. The current sources are connected to a probe pad which is accessible external to the integrated circuit. Test apparatus for detecting the enabled current sources can be connected to the integrated circuit at the probe pad.

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Austin, TX, United States of America

Ruey J Yu