Basf Se Corporation

Basf Aktiengesellschaft

Merck Patent Gesellschaft MIT Beschrankter Haftung

Merck Patent Gmbh

Rudolf Rhein

Raimund Mellies

Marc Boerner

Andrea Barko

Martin Hostalek

Claus Dusemund

Lucia Arnóld

Eberhard Tempel

Manuela Schweikert

Michael Haeberl

Claudia Wiegand

Marc BÖRNER

Gernod Kilian

Alexander Leopold

Michael Schuster

Hans Muntermann

Michael Roemer

Nils Oldenburg

Laetizia Garcia Diez

Martin Wichmann

A composition for the production of semiconductors, comprising H2SiF6 and/or HBF4 in a total amount of 10-500 mg/kg, 1-17 % by weight of H2S04, 1-15% by weight of H202, optionally in combination with additives, in aqueous solution and a process of removing residual polymers using the composition.

Composition for the removal of sidewall residues

This invention relates to etching solutions which comprise hydrofluoric acid and organic solvents for use in the process for the production of integrated circuits. The etching solutions according to the invention are particularly suitable for the selective etching of doped silicate layers.

Etching solution comprising hydrofluoric acid

The present invention relates to a composition for the removal of so-called 'sidewall residues' from metal surfaces, in particular from aluminium or aluminium-containing surfaces, in particular from aluminium or aluminium-containing surfaces, during the production of semiconductor elements.

Composition for the removing of sidewall residues

The present invention relates to buffer systems in the form of solutions or salts for preparing suspensions which can be used for chemomechanical polishing. In particular, these buffer systems can be used for preparing suspensions having a high pH of 9.5-13 which are used for the chemomechanical polishing of Si and metal surfaces of semiconductors, known as wafers.

Buffer solutions for suspensions used in chemical-mechanical polishing

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Heppenheim, Germany

Rudolf Rhein