International Business Machines Corporation

Cornell Research Foundation Inc.

Rudolf M Tromp

James Bowler Hannon

Richard Alan Haight

Ali Afzali-Ardakani

Cherie Renee Kagan

Arthur Wood Ellis

Matthew Warren Copel

Tayfun Gokmen

Jonathan Zanhong Sun

So Tanaka

John Frederick Morar

Francoise Isabelle Kolmer Le Goues

Michael Horn Von Hoegen

Christopher C Umbach

Jack M Blakely

Cherie R Kagan

A force detector and method for using the same include a lens and a cantilever below the lens. A laser above the lens is configured to emit a beam of light that reflects from a surface of the lens and the cantilever. A processor is configured to determine a force between the lens and the cantilever based on interference between the light reflected from the surface and the light reflected from the cantilever.

Surface force apparatus based on a spherical lens

A technique relates a resistive processing unit (RPU) array. A set of conductive column wires are configured to form cross-points at intersections between the set of conductive row wires and a set of conductive column wires. Two-terminal RPUs are hysteretic such that the two-terminal RPUs each have a conductance state defined by hysteresis, where a two-terminal RPU of the two-terminal RPUs is located at each of the cross-points.

Resistive processing unit with hysteretic updates for neural network training

An electron microscope system and a method of measuring an aberration of the electron microscope system are disclosed. A method of controlling an aberration of an electron microscope includes obtaining a dispersed energy distribution for electrons at a diffraction plane of the electron microscope and placing an aperture at a selected location of the dispersed energy distribution in the diffraction plane. The method measures displacement of an image of the aperture in an image plane of the electron microscope for the selected location of the aperture. The method determines an aberration coefficient of the electron microscope from the measured displacement and the selected location of the aperture and alters a parameter of an element of the electron microscope to control the aberration of the electron microscope based at least in part on the determined aberration coefficient.

Measuring spherical and chromatic aberrations in cathode lens electrode microscopes

A force detector and method for using the same includes a lens. A cantilever is disposed below the movable lens. A laser is disposed above the movable lens and is configured to emit a beam of light that reflects from a surface of the lens and the cantilever. A processor is configured to determine a force between the movable lens and the cantilever based on a change in phase in images produced by the light reflected from the spherical surface and the light reflected from the cantilever.

Methods and systems for measuring a distance include measuring a first interference pattern between a lens and a target surface using a light source at a first wavelength. A second interference pattern is measured between the lens and the target surface using a light source at a second wavelength, different from the first wavelength. An absolute measurement of a distance between the lens and the target surface is determined based on the first interference pattern and the second interference pattern.

Height measurement using optical interference

Systems for measuring a distance include a lens positioned a distance above a target surface. A camera is configured to measure a first interference pattern between the lens and the target surface using a light source at a first wavelength and to measure a second interference pattern between the lens and the target surface using a light source at a second wavelength. A processor is configured to determine an absolute measurement of the distance between the lens and the target surface based on the first interference pattern and the second interference pattern.

An electron microscope system and a method of measuring an aberration of the electron microscope system are disclosed. An aperture filters an electron beam at a diffraction plane of the electron microscope to pass through electrons having a selected energy and momentum. A displacement of an image of the passed electrons is measured at a detector in an image plane of the electron microscope. An aberration coefficient of the electron microscope is determined from the measured displacement and at least one of the energy and momentum of the passed electrons. The measured aberration can be used to alter a parameter of the electron microscope or an optical element of the electron microscope to thereby control the overall aberration of the electron microscope.

A force detector and method for using the same includes a lens. A cantilever is below the movable lens. A laser above the movable lens emits a beam of light through the movable lens, such that light reflects from the lens and the cantilever. A camera is configured to capture images produced by the light reflected from the lens and the light reflected from the cantilever. A processor is configured to determine a force between the movable lens and the cantilever based on a change in phase of the interference rings.

A force detector and method for using the same includes a movable lens having a spherical surface; a cantilever below the movable lens; a laser above the movable lens configured to emit a beam of light through the movable lens, such that light reflects from the spherical surface and the cantilever; a camera configured to capture images of interference rings produced by the light reflected from the spherical surface and the light reflected from the cantilever; and a processor configured to determine a force between the movable lens and the cantilever based on a change in phase of the interference rings.

Embodiments are further directed to an information processing system for generating a corrected image of a sample. The system includes a detector, a memory communicatively coupled to the detector, and a post-detection image processor communicatively coupled to the memory and the detector. The system is configured to perform a method that includes detecting, by the detector, data of a plurality of moving particles, wherein the data of the plurality of moving particles correspond to an uncorrected image of the sample, and wherein the uncorrected image includes defocus, astigmatism and spherical aberration. The method further includes generating, by the post-detection image processor, a corrected image of the sample based at least in part on processing the detected data of the plurality of moving particles.

Scanning transmission electron microscope having multiple beams and post-detection image correction

Embodiments are directed to an information processing system for generating a corrected image of a sample. The system includes a detector, a memory communicatively coupled to the detector, and a post-detection image processor communicatively coupled to the memory and the detector. The detector is configured to detect data of a plurality of moving particles, wherein the data of the plurality of moving particles correspond to an uncorrected image of the sample, and wherein the uncorrected image includes defocus, astigmatism and spherical aberration. The post-detection image processor is configured to generate a corrected image of the sample based at least in part on processing the detected data of the plurality of moving particles.

A composite material includes a carbon nanotube, and plural pentacene molecules bonded to the carbon nanotube. A method of forming the composite layer, includes depositing on a substrate a dispersion of soluble pentacene precursor and carbon nanotubes, heating the dispersion to remove solvent from the dispersion, heating the substrate to convert the pentacene precursor to pentacene and form the carbon nanotube-pentacene composite layer.

Pentacene-carbon nanotube composite, method of forming the composite, and semiconductor device including the composite

Embodiments of the invention relate to electron microscopy. Example embodiments relate to an apparatus including a first electron beam source, a second electron beam source, and a receiving unit. The first electron beam source is configured to provide a first low-voltage electron beam to a surface of a sample. The second electron beam source is configured to provide a second low-voltage electron beam to pass through the sample. The receiving unit is configured to analyze the first low-voltage electron beam, or the second low-voltage electron beam, or both the first and the second electron beam to obtain information about the sample.

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North Salem, NY, United States of America

Rudolf M Tromp