Inplane Photonics, Inc.

Rudolf Kazarinov

Sergey V Frolov

Joseph Shmulovich

A semiconductor laser source includes a laser diode having front and rear facets. The laser diode includes a substrate and a lower cladding layer disposed on the substrate. The lower cladding layer is doped with a dopant of the first conductivity type. An active layer is disposed on the lower cladding layer and an upper cladding layer is disposed on the active layer. The upper cladding layer is doped with a dopant of the second conductivity type. At least one electrode is disposed on a first outer layer of the diode. A pair of electrodes is disposed on a second outer layer of the diode. The second outer layer is located on a side of the diode opposing the first outer layer. The pair of electrodes is configured to allow application of different currents to each one of the electrodes in the pair of electrodes. A reflector, which is located external to the laser diode, is in optical communication with the front facet of the laser diode for providing optical feedback to the active region.

Growing community of inventors

Sedona, AZ, United States of America

Rudolf Kazarinov