Nxp B.v.

Rudiger Gunter Mauczok

Mareike K Klee

Aarnoud Laurens Roest

Klaus Reimann

Robertus Adrianus Maria Wolters

Michael Joehren

Linda Van Leuken-Peters

The present invention relates to an electronic component, that comprises, on a substrate, at least one integrated MIM capacitor, () an electrically insulating first cover layer () which partly or fully covers the top capacitor electrode () and is made of a lead-containing dielectric material, and a top barrier layer () on the first cover layer. The top barrier layer serves for avoiding a reduction of lead atoms comprised by the first cover layer under exposure of the first cover layer to a reducing substance. An electrically insulating second cover layer () on the top barrier layer has a dielectric permittivity smaller than that of the first cover layer establishes a low parasitic capacitance of the cover-layer structure. The described cover-layer structure with the intermediate top barrier layer allows to fabricate a high-accuracy resistor layer () on top.

3D integration of a MIM capacitor and a resistor

The present invention relates to an electric component comprising at least one first MIM capacitor having a ferroelectric insulator with a dielectric constant of at least 100 between a first capacitor electrode of a first electrode material and a second capacitor electrode of a second electrode material. The first and second electrode materials are selected such that the first MIM capacitor exhibits, as a function of a DC voltage applicable between the first and second electrodes, an asymmetric capacitance hysteresis that lets the first MIM capacitor, in absence of the DC voltage, assume one of at least two possible distinct capacitance values, in dependence on a polarity of a switching voltage last applied to the capacitor, the switching voltage having an amount larger than a threshold-voltage amount. The invention is applicable for ESD sensors, memories and high-frequency devices.

Generating and exploiting an asymmetric capacitance hysteresis of ferroelectric MIM capacitors

Growing community of inventors

Erkelenz, Germany

Rudiger Gunter Mauczok