Applied Materials, Inc.

Ruby Liao

Peter W Lee

Bang C Nguyen

Shankar Vankataranan

A method and apparatus for reducing surface sensitivity of a TEOS/O,SACVD silicon oxide layer, formed over a substrate, that deposits a ramp layer while ramping pressure to a target deposition pressure and deposits an SACVD layer over the ramp layer. In one embodiment, the flow of ozone is stopped during the pressure ramp-up to control the thickness of the ramp layer.

Method and apparatus for elimination of TEOS/ozone silicon oxide surface sensitivity

A method and apparatus for reducing surface sensitivity of a TEOS/O.sub.3 SACVD silicon oxide layer, formed over a substrate, that deposits a ramp layer while ramping pressure to a target deposition pressure and deposits an SACVD layer over the ramp layer. In one embodiment, the flow of ozone is stopped during the pressure ramp-up to control the thickness of the ramp layer.

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Sunnyvale, CA, United States of America

Ruby Liao