Uchicago Argonne, LLC

University of Chicago

Ruben Waldman

Seth B Darling

Jeffrey W Elam

Hao-Cheng Yang

Alex B Martinson

Lin Chen

The sequential infiltration synthesis (SIS) of group 13 indium and gallium oxides (InOand GaO) into polymethyl methacrylate (PMMA) thin films is demonstrated. Examples highlight the an SIS process using trimethylindium (TMIn) and trimethylgallium (TMGa), respectively, with water. In situ Fourier transform infrared (FTIR) spectroscopy reveals that these metal alkyl precursors reversibly associate with the carbonyl groups of PMMA in analogy to trimethylaluminum (TMAl), however with significantly lower affinity. SIS with TMIn and water enables the growth of InOat 80° C., well below the onset temperature of atomic layer deposition (ALD) using these precursors.

Sequential infiltration synthesis of group 13 oxide electronic materials

A Janus membrane exhibiting sides with different properties and methods of fabricating such a Janus membrane. The membrane comprises a polymer material lacking polar functional groups. One side of the membrane is masked during atomic layer deposition (ALD). ALD is utilized to deposit a conformal coating on an exposed side of the membrane.

Janus membranes via atomic layer deposition

Polymeric membranes are modified via SIS to promote membrane resilience, prolong membrane lifetime, and mitigate fouling. Modified membranes include an inorganic material within an outer portion of the modified membrane and a polymeric core that remains unmodified by the inorganic material. The polymer may be removed leaving an inorganic material patterned from an initial unmodified polymeric membrane.

Filtration membranes

Atomic layer deposition is utilized to deposit a coating on a membrane. The coated membrane exhibits a tightly bound hydration layer upon exposure to water. The resultant coated membrane is oleophobic.

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Chicago, IL, United States of America

Ruben Waldman