Imec

Vrije Universiteit Brussel

Imec Vzw

Ruben Lieten

Stefan Degroote

Gustaaf Regina Borghs

The present invention provides a method for providing a crystalline germanium layer on a crystalline base substrate having a crystalline surface. The method comprises cleaning the base substrate for removing contaminants and/or native oxides from the surface, providing an amorphous germanium layer on the surface of the base substrate while exposing to the base substrate to a hydrogen source such as e.g. a hydrogen plasma, a Hflux or hydrogen originating from dissociation of GeHand/or to a non-reactive gas source such as N, He, Ne, Ar, Kr, Xe, Rn or mixtures thereof, and crystallizing the amorphous germanium layer by annealing the base substrate so as to provide a crystalline germanium layer. The present invention also provides a method for the production of a photovoltaic cell or a photo-electrolysis cell or for forming a CMOS device by using the method according to embodiments of the invention and a substrate comprising a crystalline germanium layer formed by a method according to embodiments of the invention.

Method for producing a crystalline germanium layer on a substrate

The described system relates to a method for forming a layer of a mono-crystalline semiconductor material on a substrate, comprising providing a substrate, growing epitaxially a template comprising at least one monolayer of a semiconductor material on the substrate, thereafter depositing an amorphous layer of the semiconductor material on the template; performing a thermal treatment or a laser anneal, thereby converting substantially all of the amorphous layer of the semiconductor material into a mono-crystalline layer of the semiconductor material. According to an embodiment, the semiconductor material is Ge and the substrate is a Si substrate. The template is preferably a few monolayers thick.

Method for manufacturing a mono-crystalline semiconductor layer on a substrate

The present invention relates a method for forming a monocrystalline GeN layer () on a substrate () comprising at least a Ge surface (). The method comprises, while heating the substrate () to a temperature between 550&#xb0; C. and 940&#xb0; C., exposing the substrate () to a nitrogen gas flow. The present invention furthermore provides a structure comprising a monocrystalline GeN layer () on a substrate (). The monocrystalline GeN formed by the method according to embodiments of the invention allows passivation of surface states present at the Ge surface ().

Growth of monocrystalline GeN on a substrate

The present invention provides a method for depositing or growing a group III-nitride layer, e.g. GaN layer (), on a substrate (), the substrate () comprising at least a Ge surface (), preferably with hexagonal symmetry. The method comprises heating the substrate () to a nitridation temperature between 400&#xb0; C. and 940&#xb0; C. while exposing the substrate () to a nitrogen gas flow and subsequently depositing the group III-nitride layer, e.g. GaN layer (), onto the Ge surface () at a deposition temperature between 100&#xb0; C. and 940&#xb0; C. By a method according to embodiments of the invention, a group III-nitride layer, e.g. GaN layer (), with good crystal quality may be obtained. The present invention furthermore provides a group III-nitride/substrate structure formed by the method according to embodiments of the present invention and a semiconductor device comprising at least one such structure.

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Zonhoven, Belgium

Ruben Lieten