Stmicroelectronics (grenoble) Sas

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives Centre National De La Recherche Scientifique

Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics (rousset) Sas

Ruben Esteban Llorente

Roch Espiau De Lamaestre

Bernard Guillaumot

Jean-Jacques Greffet

A source of photons resulting from a recombination of localized excitons, including a semiconductor layer having a central portion surrounded with heavily-doped regions; above said central portion, a layer portion containing elements capable of being activated by excitons, coated with a first metallization; and under the semiconductor layer, a second metallization of greater extension than the first metallization. The distance between the first and second metallizations is on the order of from 10 to 60 nm; and the lateral extension of the first metallization is on the order of from &#x3bb;0/10*nto &#x3bb;0/2*n, where &#x3bb;0 is the wavelength in vacuum of the emitted light and nis the effective refractive index of the mode formed in the cavity created by the two metallizations.

Source of photons resulting from a recombination of localized excitons

Growing community of inventors

Madrid, Spain

Ruben Esteban Llorente