Epistar Corporation

Industrial Technology Research Institute

Lite-on Technology Corporation

Lextar Electronics Corporation

National Central University

Everlight Electronics Co., Ltd.

China Glaze Co., Ltd.

Bell Ceramics Co., Ltd.

Silitek Electronic (guangzhou) Co., Ltd.

Everlight Usa, Inc.

Unity Opto Technology Co., Ltd.

Chung-shan Institute of Science and Technology, Armaments Bureau, M.n.d

Taiwan Hopax Chemicals Mfg. Co., Ltd.

Taiwan Hopax Chems. Mfg. Co., Ltd.

Tai-electric Wire & Cable Co., Ltd.

Ru-Shi Liu

Tzong-Liang Tsai

Yu-Chun Lee

Hung-Yuan Su

Chien-Yuan Wang

Ching-Yi Chen

Hung-Chia Wang

Shu-Fen Hu

Liang-Sheng Chi

Chih-Ming Wang

Hung-Chun Tong

Yi-Shan Lin

Wen-Hsiung Liu

Chun-Che Lin

Chia-Cheng Kang

Yao-Chung Tu

Chih-Min Jang

Chi-Ting Du

Wen-Cheng Wu

Ivan Baginskiy

Ting-Shan Chan

An-Cih Tang

Mu-Huai Fang

Min-Hsun Hsieh

Chih-Chiang Lu

Ming-Chi Hsu

Yu-Sheng Tang

Yen-Wen Chen

Chiao-Wen Yeh

Li-Jane Her

Shu-Ting Hsu

Jenq-Yang Chang

Sung-Chun Chang

Yao-Tsung Huang

Sheng-Feng Wu

Chun Che Lin

Chau-Ting Chang

Chih-Chieh Yang

Tsen-Hsu Lin

Der-Shiuh Shy

Chung-Ho Tai

Yi-Jung Chen

Chin-Chang Shen

Chaochin Su

Te-Hsin Chiang

Tsair-Shyang Huang

Xue-Jie Zhang

Shin-Ying Lin

Wen-Li Zhou

Ling-Ling Wei

Chun-Yuan Chen

Shyi-Ming Pan

Li-Duan Tsai

Kuo-Ju Chen

Wei-Kang Cheng

Chun-Chieh Huang

Hao-Yu Chen

Chen-Hong Lee

Yih-Hua Renn

Ai-Sen Liu

Ming-Jinn Tsai

Man-Yin Lo

Chi Hsiu Lee

Jau-Jier Chu

I-Lun Ma

Kan-Lin Hsueh

Yung-Hsiang Lin

Yu-Min Peng

Yi-Ting Tsai

Ran-Jin Lin

Cheng-I Chu

Hung-Li Yeh

Chieh-Yu Kang

Hao-Ming Chen

Wen-Wan Tai

Yu-chih Lin

Chih-Chao Chang

Kuang-Mao Lu

Yi-Sheng Ting

Chen-Lun Hsing Chen

Cheng-Wen Tsai

Chia-Chin Chang

Wen-Wei Chien

Ping-Hung Lin

Jen-Chun Lin

Ho Chang

Jeng-Yang Chang

Hsing Chen Chen-Lun

Yeow-Chin Chen

Yu-Jui Tseng

Yu-Chun Chen

Chang-Tai Hisao

Chun-Wei Huang

Tzu-Chen Liu

Chien-Hsin Wang

Po-Hsiang Chung

Hsin-Yu Tsai

Veeramani Rajendran

Der-Shing Chiang

A solid-state sodium-carbon dioxide battery is provided. The solid-state sodium-carbon dioxide battery comprises a positive electrode, a negative electrode, and an inorganic solid-state electrolyte disposed between the positive electrode and the negative electrode, wherein the positive electrode can catalyze the reaction of sodium ions and carbon dioxide, the negative electrode comprises sodium.

Solid-state sodium-carbon dioxide battery

A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClBrI), wherein 0&#x2264;a&#x2264;1, 0&#x2264;b&#x2264;1.

Application of quantum dot composite material

An infrared emitting fluoride phosphor and an infrared light emitting device are provided. The infrared emitting fluoride phosphor includes an activation center of Cr. The infrared light emitting device includes a light source and the infrared emitting fluoride phosphor. The light source is disposed to emit a first light, and the first light has a wavelength of 400-700 nm. The infrared emitting fluoride phosphor is configured to be excited by the first light to emit a first infrared ray. The first infrared ray has a wavelength of 650-1000 nm. The infrared light emitting device has a broad emission wavelength, such that it can be applied in variety of sensing device.

Infrared emitting fluoride phosphor and infrared light emitting device

A perovskite luminescent nanocrystal has a chemical formula represented by: CsBX, wherein B includes one or more selected from the group consisting of Ge, Pb, Sn, Sb, Bi, Cu, and Mn, and X includes one or more selected from the group consisting of Cl, Br, and I, wherein the CsBXperovskite luminescent nanocrystal has a pure phase, and a molar ratio of Cs to B (Cs/B) in the CsBXperovskite luminescent nanocrystal is greater than 1 and less than 4.

Perovskite luminescent nanocrystal, light emitting device, and manufacturing method for perovskite luminescent nanocrystal

A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.

Light-emitting device

An overcoating inorganic quantum dot and a method for preparing the same are provided. The overcoating inorganic quantum dot includes at least one perovskite quantum dot with an oxide overcoat. The method includes forming the perovskite quantum dots, and overcoating an oxide overcoat on the perovskite quantum dots.

Overcoating inorganic quantum dot and method for preparing the same

The present invention relates to a phosphor, a method for preparing the phosphor, an optoelectronic component, and a method for producing the optoelectronic component. The phosphor has the following general formula: LaGaGeO: 3xA, yCr, 5zB, where x, y, and z do not equal to 0 simultaneously; A represents at least one of Gd and Yb; B represents at least one of Sn, Nb, and Ta. For the phosphor, its emission spectrum is within a red visible light region and a near-infrared region when excited by blue visible light, purple visible light or ultraviolet light; and it has a wide reflection spectrum and a high radiant flux. Therefore, it can be used in optoelectronic components such as LEDs to meet requirements of current medical testing, food composition analysis, security cameras, iris/facial recognition, virtual reality, gaming notebook and light detection and ranging applications.

Phosphor, method for preparing phosphor, optoelectronic component, and method for producing optoelectronic component

A method for manufacturing a nitride phosphor is provided. The method comprises providing a nitride phosphor formulation and subjecting the nitride phosphor formulation to a hot isostatic pressing step. The nitride phosphor formulation comprises a flux and a phosphor precursor, wherein the flux is a barium-containing nitride. The phosphor precursor comprises two or more metal nitrides, and wherein a plurality of metal elements are present in the nitride phosphor and the two or more metal nitrides contain the plurality of metal elements.

Method for manufacturing nitride phosphor

Quantum dot composite material and manufacturing method and application thereof

The present disclosure provides a method for fabricating a phosphor. A first solution is formed by dissolving potassium hexafluorogermanate (KGeF) and either KMnFor KMnOin a hydrofluoric acid solution. An anhydrous ethanol is added to the first solution to make a total concentration of fluoride ions of potassium hexafluorogermanate (KGeF), hydrofluoric acid, and either KMnFor KMnOequal to or less than 48M to form a precipitate. Afterward, the precipitate is collected.

Phosphor, fabricating method thereof, method for regulating crystal phase thereof, and method for changing crystal phase hereof

A phosphor is provided, which has a composition of SrLiAlN:Ce, wherein 0&#x3c;x&#x3c;0.1. SrLiAlNis a host material, and Ceis a luminescent center. The phosphor can be collocated with an excitation light source to be applied in an illumination device. On the other hand, the phosphor can be collocated with other phosphors of different colors to be applied in a white light illumination device.

Phosphor and illumination device utilizing the same

The present invention provides a phosphor represented by the following formula: K[GeF]:Mn, wherein 0&#x3c;x&#x3c;0.2. The phosphor has a hexagonal phase of a P6mc space group. The present invention also provides a method for fabricating the above phosphor. The present invention further provides a light-emitting device and a backlight module employing the same.

Phosphor, fabricating method thereof, and light-emitting device and backlight module employing the same

A fluoride phosphor including a sheet-like crystal and a manufacturing method and an application therefore are disclosed. The fluoride phosphor has a chemical formula A[MF]:Mn, with Mnas an activator. The A is Li, Na, K, Rb, Cs, NH4 or a combination thereof. The M is Ge, Si, Sn, Ti, Zr or a combination thereof. The sheet-like crystal has a thickness d. A crystal flat surface of the sheet-like crystal has a maximum length a. The maximum length a is defined as a distance between two end points on an edge of the crystal flat surface and farthest from each other. 8&#x2264;a/d&#x2264;35.

Fluoride phosphor including sheet-like crystal and manufacturing method and application thereof

The present invention provides a phosphor with a preferred orientation represented by the following formula: A[MF]:Mn, wherein A is selected from a group consisting of Li, Na, K, Rb, Cs, and NH, M is selected from a group consisting of Ge, Si, Sn, Ti, and Zr. The preferred orientation is a (001)/(011) preferred orientation. The present invention also provides a method for fabricating the above phosphor. The present invention further provides a light-emitting element package structure employing the same.

Phosphor with preferred orientation, fabricating method thereof, and light-emitting element package structure employing the same

A phosphor, having a general formula of K[SiGe]F:Mn. The phosphor is excited to emit a light having a first main emission peak with a first maximum emission intensity and a first dominant wavelength, wherein a relative emission intensity S of the light of the phosphor is constantly greater than 85% across an temperature of the phosphor between 300 K and 470 K during operation, wherein S=(I/I)*100%, Iand Iare the first maximum emission intensity when the temperature of the phosphor is at 300 K and T during operation respectively, and 300 K&#x3c;T&#x2264;470K.

Phosphor

Growing community of inventors

Hsinchu, Taiwan

Ru-Shi Liu