Taiwan Semiconductor Manufacturing Comp. Ltd.

Ru-shang Hsiao

Ling-Sung Wang

Ching-Hwanq Su

Jung-Chi Jeng

Ying Hsin Lu

A semiconductor image-sensing structure includes a semiconductor substrate having a sensor region and a circuitry region, a plurality of fin structures disposed in the circuitry region, a mesa structure disposed in the sensor region, a first gate structure disposed over the plurality of fin structures in the circuitry region, and a second gate structure disposed over the mesa structure in the sensor region. The plurality of fin structures and the mesa structure include a same semiconductor material.

Semiconductor image-sensing structure and method for forming the same

The present disclosure provides a semiconductor structure in accordance with some embodiment. The semiconductor structure includes a semiconductor substrate having a first circuit region and a second circuit region; active regions extended from the semiconductor substrate and surrounded by isolation features; first transistors that include first gate stacks formed on the active regions and disposed in the first circuit region, the first gate stacks having a first gate pitch less than a reference pitch; and second transistors that include second gate stacks formed on the active regions and disposed in the second circuit region, the second gate stacks having a second pitch greater than the reference pitch. The second transistors are high-frequency transistors and the first transistors are logic transistors.

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HSINCHU COUNTY, Taiwan

Ru-shang Hsiao