Cadence Design Systems, Inc.

Invarium, Inc.

Other

Roy Varada Prasad

Abdurrahman Sezginer

Chi-Song Horng

Dipankar Pramanik

Ram S Ramanujam

Michiel Victor Paul Kruger

Franz X Zach

Hsu-Ting Huang

Gokhan Percin

The present invention provides a method for compensating infidelities of a process that transfers a pattern to a layer of an integrated circuit, by minimizing, with respect to a photomask pattern, a cost function that quantifies the deviation between designed and simulated values of circuit parameters of the pattern formed on a semiconductor wafer.

System and method for modifying a data set of a photomask

In a large form-factor mobile electronic device having a touchscreen for receiving user thumb input actions via an operating system desktop to facilitate user-software interactions, a method of enabling single-handed user-software interactions, comprising the steps of: generating a single-handed utilization zone; positioning said single-handed utilization zone at a current detected thumb location on the touchscreen; rendering a proxy desktop within said zone, said proxy desktop providing substantially the same functionality of the operating system desktop of the large form-factor mobile electronic device and being conformed substantially in shape and size to a small form factor mobile electronic device to facilitate user familiarity with thumb stroke actions with the rendered touch screen desktop; and rendering an application interface within said zone upon receiving a generate application interface request.

Method of single-handed software operation of large form factor mobile electronic devices

An apparatus and method of synthesizing a photolithographic data set includes using a first computational model to calculate a first figure-of-merit for the photolithographic data set; changing a first part of the photolithographic data set to increase the first figure-of-merit; and then using a second computational model to calculate a second figure-of-merit of the photolithographic data set; and changing a second part of the photolithographic data set to increase the second figure-of-merit. The second computational model enables figure-of-merit calculations to be executed at a significantly faster execution rate than the first computational model.

Apparatus and method for photomask design

A method of modifying polygons in a data set mask-less or mask based optical projection lithography includes: 1) mapping the data set to a figure-of-demerit; 2) moving individual polygon edges to decrease the figure-of-demerit; and 3) disrupting the set of polygons to enable a further decrease in the figure-of-demerit, wherein disrupting polygons includes any of the following polygon disruptions: breaking up, merging, or deleting polygons.

Apparatus and method for breaking up and merging polygons

A method for generating an OPC model is provided which takes into consideration across-wafer variations which occur during the process of manufacturing semiconductor chips. More particularly, a method for generating an OPC model is provided which takes into consideration across-wafer variations which occur during the process of manufacturing semiconductor chips based on the parameters of test patterns measured at the 'wafer sweet spots' so as to arrive at an accurate model.

Calibration on wafer sweet spots

The present invention provides a system and method of modifying the mask layout shapes of an integrated circuit layout design to compensate for reticle field location-specific systematic CD variations resulting from mask writing process variations, lens imperfections in lithographic patterning, and photoresist process variations. Called PLC (Process-optimized Layout Compensation), each set of compensation rules according to the present invention is specifically tailored for a particular mask-writer-patterning-tools-and-resist-process combination, and are performed on a reticle-wide basis. Furthermore, for each geometric shape in the mask layout, the amount of modification is determined based on a categorization of the type of the shape, the specific location in the reticle field the particular shape falls in, its context (i.e., surrounding patterns, orientation, etc.), as well as certain photoresist parameters to be used in the patterning process.

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Los Gatos, CA, United States of America

Roy Varada Prasad