Yissum Research Development Company of the Hebrew University of Jerusalem Ltd.

Technion Research & Development Foundation Ltd

Wisconsin Alumni Research Foundation

Roy Shenhar

Moti Margalit

Nir Tessler

Oded Globerman

Paul Franklin Nealey

Uri Banin

Asaf Salant

Elina Ploshnik

Elisheva Michman

Marcus Müller

Marcus Muller

Kostas Daoulas

The invention relates to a block co-polymer film having different morphologies within said film, uses thereof and processes for its preparation.

Multi-morphology block co-polymer films and processes for their preparation

The present invention provides block copolymers comprising at least one covalent polymer block and at least one supramolecular polymer block, processes for their preparations and uses thereof.

Quasi-block copolymer melts, processes for their preparation and uses thereof

An electronic device is presented, such as a thin film transistor. The device comprises a patterned electrically-conductive layer associated with an active element of the electronic device. The electrically-conductive layer has a pattern defining an array of spaced-apart electrically conductive regions. This technique allows for increasing an electric current through the device.

Transistor structures and methods of fabrication thereof

Provided is an assembly including a block co-polymer film and a plurality of nano-rods; where the plurality of nano-rods are oriented at the surface of the block co-polymer film, substantially perpendicular to at least one interface between block co-polymer domains. Further provided are methods of assembly formation and devices including such assemblies.

Assemblies comprising block co-polymer films and nanorods

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Mevasseret Zion, Israel

Roy Shenhar