Honeywell International Inc.

Broadcom Corporation

Roy Milton Carlson

David Owen Erstad

Yong Lu

Jonathan Alois Schmitt

Owen Hynes

David O Erstad

A programmable memory cell including a thick oxide spacer transistor, a programmable thin oxide anti-fuse disposed adjacent to the thick oxide spacer transistor, and first and second thick oxide access transistors. The thick oxide spacer transistor and first and second thick oxide access transistors can include an oxide layer that is thicker than an oxide layer of the programmable thin oxide anti-fuse. The programmable thin oxide anti-fuse and the thick oxide spacer transistor can be natively doped. The first and second thick oxide access transistors can be doped so as to have standard threshold voltage characteristics.

One-time programmable memory cell

A device for one-time-programmable (OTP) memory may include a capacitor formed by a conductive layer, an oxide layer, and a semiconductor well, and a diode that is formed after programing the device. The device may be programmable by applying a voltage between the conductive layer and the semiconductor well. The applied voltage may be capable of rupturing the oxide layer at one or more points. The conductive layer, the oxide layer, and the semiconductor well may be native CMOS process formations.

Programmable diode array for high density OTP application

A disclosed embodiment is a programmable memory cell having improved IV characteristics comprising a thick oxide spacer transistor interposed between a programmable thin oxide antifuse and a thick oxide access transistor. The spacer transistor separates a rupture site formed during programming the programmable antifuse from the access transistor, so as to result in the improved IV characteristics. The programmable antifuse is proximate to one side of the spacer transistor, while the access transistor is proximate to an opposite side of the spacer transistor. The source region of the access transistor is coupled to ground, and the drain region of the access transistor also serves as the source region of the spacer transistor. The access transistor is coupled to a row line, while the spacer transistor and the programmable antifuse are coupled to a column line. The rupture site is formed during programming by applying a programming voltage to the programmable antifuse.

By adjusting a register's capturing clock edge timing so that the register captures data when the data returns to a correct state, the register may be protected against DSET upsets. If a data glitch occurs near the clock edge, the valid time at the register output is increased (CLK to Q). This valid time increase occurs when the presence of a DSET transient is detected near the clock edge.

Digital single event transient hardened register using adaptive hold

A system and method for providing error recovery to an asynchronous logic circuit is presented. The asynchronous logic circuit with error recovery may use temporal redundancy to compare the results of an asynchronous computation and initiate error recovery if necessary. Outputs of the asynchronous logic circuit are compared using a plurality of asynchronous register voters. If an asynchronous register voter detects an inconsistent result, the asynchronous register voter clears itself. A majority of common data outputs from the plurality of asynchronous register voters is provided as an output that is representative of the output of the asynchronous logic circuit.

Error recovery in asynchronous combinational logic circuits

An apparatus for hardening logic circuitry against a Single-Event-Effect condition and for providing immunity to an overshoot and undershoot condition is provided. The apparatus includes undershoot-blocking and overshoot-blocking modules that are configured to be coupled to overshoot-insensitive and undershoot-insensitive nodes of the logic circuitry, respectively. The undershoot-blocking module is operable to (i) receive from a first node of the logic circuitry a first signal event having a undershoot condition impressed thereon, and (ii) block it from passing to the overshoot-insensitive node. The overshoot-blocking module is operable to (i) receive from the first node a second signal event having an overshoot condition impressed thereon, and (ii) block it from passing to the undershoot-insensitive node. As such, further propagation of the overshoot and undershoot conditions are prevented.

Single event upset hardened circuitry without sensitivity to overshoot and/or undershoot conditions

A system and method for hardening a Null Convention Logic (NCL) circuit against Single Event Upset (SEU) is presented. Placing a resistive element into a feedback loop of the NCL circuit may harden the NCL circuit. A bypass element may be placed in parallel with the resistive element to increase the latching speed of the hardened NCL circuit. Additionally, replacing transistors in an input driver, the feedback loop, and an inverter with transistor stacks, which may include two or more transistors connected in series, may harden the NCL circuit. Further, two NCL gates may be cross-coupled to harden the NCL circuit.

Single event hardening of null convention logic circuits

A system and method for hardening an asynchronous combinational logic circuit against Single Event Upset (SEU) is presented. The asynchronous combinational logic circuit is located between two asynchronous registers. A fault detector is used to detect a fault at an output of the asynchronous combinational logic circuit caused by SEU. If the fault detector detects a fault, a first asynchronous register is prevented from clearing stored data and a second asynchronous register is prevented from loading data from the asynchronous combinational logic circuit until the fault is cleared. Further, a timer circuit is used to ensure enough time elapses to allow the asynchronous combinational logic circuit to reevaluate itself. The asynchronous combinational logic circuit reevaluates itself by first propagating a NULL wave front to clear the fault and then propagating the data stored in the first asynchronous register to its outputs.

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Plymouth, MN, United States of America

Roy Milton Carlson