Harvard College

Other

Gm Global Technolgoy Operations, Inc.

The Charles Stark Draper Laboratory, Inc.

Libbey-owens-ford Co.

Harvard Corporation

Quino Energy, Inc.

Roy Gerald Gordon

Jill Svenja Becker

Dennis Michael Hausmann

Michael J Aziz

Damon B Farmer

Seigi Suh

Harish B Bhandari

Hoon Y Kim

Yeung Au

Youbo Lin

Booyong S Lim

Liuchuan Tong

Eugene S Beh

Alan Aspuru-Guzik

Michael S Marshak

Brian Huskinson

Suleyman Er

Keith Kramer

Changwon Suh

Kaixiang Lin

David Hoffman

Mahmoud H Abd Elhamid

Youssef Morcos Mikhail

Thomas A Trabold

Jene A Golovchenko

Daniel Branton

Gayatri Vyas

Amy Elizabeth Duwel

Peter J Ferrara

Andrew R Barron

Theodore Alexander Betley

Peter H Hofer

Huazhi Li

Charles M Marcus

Dawen Pang

Randy N R Broomhall-Dillard

Marc-Antoni Goulet

Roy Filly

Brett Severence

Leonard Neil Jacques Rodriguez

David Gator Kwabi

Yunlong Ji

Adam S Hock

Haifan Liang

Jaeyeong Heo

Xinye Liu

Prasert Sinsermsuksakul

Renaud Fix

Jillian M Buriak

Umar Riaz

Qing Chen

Gaston Dalby

Clarence A Barnes, Jr

Peng Chen

Sarah Kurtz

Christina M Chang

Toshiyuki Mitsui

Luke M Davis

James R Williams

Jean-Sebastien Lehn

Jill Becker

Meisam Bahari

Min Wu

Articles are described including a substrate and a copper halide layer on the substrate, where the interfacial free energy between the substrate and the copper halide layer allows the copper halide layer to form continuously, wherein the copper halide layer conforms to the shape of the substrate. The articles may further include an adhesion layer disposed in-between the substrate and the copper halide layer, where the surface free energy between the adhesion layer and the copper halide layer allows the copper halide layer to form continuously, wherein the copper halide layer or the adhesion layer conform to the shape of the substrate. Also described are methods of forming an article using chemical vapor deposition.

Copper halide layers

The invention features redox flow batteries and compound useful therein as negolytes or posolytes. The batteries and compounds are advantageous in terms of being useable in water solutions at neutral pH and have extremely high capacity retention. Suitable negolytes are diquaternized bipyridines, suitable posolytes are water-soluble ferrocene derivatives.

Aqueous redox flow battery electrolytes with high chemical and electrochemical stability, high water solubility, low membrane permeability

We disclose quinone compounds and related species (Formula I) that possess significant advantages when used as a redox active material in a battery, e.g., a redox flow battery. In particular, the compounds provide redox flow batteries (RFBs) with extremely high capacity retention. For example, RFBs of the invention can be cycled for 500 times with negligible loss of capacity, and such batteries could be employed for years of service. Thus, the invention provides a high efficiency, long cycle life redox flow battery with reasonable power cost, low energy cost, and all the energy scaling advantages of a flow battery.

Quinones having high capacity retention for use as electrolytes in aqueous redox flow batteries

The invention provides flow batteries including an anthraquinone and methods of discharging the batteries that reduce loss of capacity. The loss of capacity of anthraquinones may be mitigated by controlling the state of charge and/or oxidizing the negolyte.

Extending the lifetime of organic flow batteries via redox state management

This disclosure relates to tertiary amine solutions of metal precursors used for chemical vapor deposition or atomic layer deposition. The tertiary amine solutions have many advantages. They dissolve high concentrations of non-polar precursors without reacting with them. They do not supply impurities such as oxygen or halogens to the material being produced, nor do they etch or corrode them. Vaporization rates can be chosen so that the solute and solvent may be evaporated simultaneously, have high flash points, and low flammability. Small droplets may be formed easily which facilitate rapid evaporation without decomposition of he dissolved metal precursor to supply vapors for chemical vapor deposition or atomic layer deposition processes.

Vapor source using solutions of precursors in tertiary amines

Compounds are synthesized with bicyclic amidinate ligands attached to one or more metal atoms. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Copper metal films are formed on heated substrates by the reaction of copper(I) bicyclic amidinate vapor and hydrogen gas, whereas reaction with water vapor produces copper oxide. Silver and gold films were deposited on surfaces by reaction of their respective bicyclic amidinate vapors with hydrogen gas. Reaction of cobalt(II) bis(bicyclic amidinate) vapor, ammonia gas and hydrogen gas deposits cobalt metal films on heated substrates, while reaction with ammonia produces cobalt nitride and reaction with water vapor produces cobalt oxide. Ruthenium metal films are deposited by reaction of ruthenium(II) bis(bicyclic amidinate) or ruthenium(III) tris(bicyclic amidinate) at a heated surface either with or without a co-reactant such as hydrogen gas or ammonia or oxygen. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. Hafnium oxide films are deposited by reaction of hafnium(IV) tetrakis(bicyclic amidinate) with oxygen sources such as water, hydrogen peroxide or ozone. The HfOfilms have high dielectric constant and low leakage current, suitable for applications as an insulator in microelectronics. The films have very uniform thickness and complete step coverage in narrow holes.

Metal bicyclic amidinates

The invention provides an electrochemical cell based on a new chemistry for a flow battery for large scale, e.g., gridscale, electrical energy storage. Electrical energy is stored chemically in quinone molecules having multiple oxidation states, e.g., three or more. During charging of the battery, the quinone molecules at one electrode are oxidized by emitting electrons and protons, and the quinone molecules at the other electrode are reduced by accepting electrons and protons. These reactions are reversed to deliver electrical energy. The invention also provides additional high and low potential quinones that are useful in rechargeable batteries.

Quinone and hydroquinone based flow battery

The present invention relates to flow battery systems including a flow battery and an electrolyte rebalancing system. In accordance with certain embodiments, the electrolytes used in the systems of the present invention are aqueous, and in one embodiment, bromine species are used as redox-active species.

Flow battery with electrolyte rebalancing system

A structure includes a high-strength nanowire core with a first electrically-conductive metal layer bonded to an outer surface thereof. An insulating layer is bonded to an outer surface of the first electrically-conductive metal layer, and a second electrically-conductive metal layer is bonded to an outer surface of the insulating layer. The nanowires are braided into a litz bundle, which reduces electrical losses during transmission of high-frequency current.

Electrically conductive nanowire Litz braids

The invention provides an electrochemical cell based on a new chemistry for a flow battery for large scale, e.g., gridscale, electrical energy storage. Electrical energy is stored chemically at an electrochemical electrode by the protonation of small organic molecules called quinones to hydroquinones. The proton is provided by a complementary electrochemical reaction at the other electrode. These reactions are reversed to deliver electrical energy. A flow battery based on this concept can operate as a closed system. The flow battery architecture has scaling advantages over solid electrode batteries for large scale energy storage.

Small organic molecule based flow battery

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300&#xb0; C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250&#xb0; C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide

This disclosure relates to terpene solutions of metal precursors used for chemical vapor deposition, atomic layer deposition, spray pyrolysis or misted deposition. The terpenes do not supply impurities such as oxygen or halogens to the material being produced, nor do they etch or corrode them. In spray pyrolysis or misted deposition, small droplets provide uniform coating. Terpenes have high flash points and low flammability, reducing the risk of fires. Terpenes have low toxicity and are biodegradable. They are available in large amounts from renewable, natural plant sources, and are low in cost.

Vapor source using solutions of precursors in terpenes

Compounds, and oligomers of the compounds, are synthesized with cyclic amine ligands attached to a metal atom. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. The films have very uniform thickness and high step coverage in narrow holes.

Metal amides of cyclic amines

There are provided methods for functionalizing a planar surface of a microelectronic structure, by exposing the surface to at least one vapor including at least one functionalization species, such as NOor CHONO, that non-covalently bonds to the surface while providing a functionalization layer of chemically functional groups, to produce a functionalized surface. The functionalized surface is exposed to at least one vapor stabilization species that reacts with the functionalization layer to form a stabilization layer that stabilizes the functionalization layer against desorption from the planar microelectronic surface while providing chemically functional groups. The stabilized surface is exposed to at least one material layer precursor species that deposits a material layer on the stabilized planar microelectronic surface. The stabilized planar microelectronic surface can be annealed at a peak annealing temperature that is less than about 700&#xb0; C.

Gas-phase functionalization of surfaces of microelectronic structures

An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces. Catalytic deposition of copper using a Mn, Cr, or V containing precursor and an iodine or bromine containing precursor is also provided.

Self-aligned barrier and capping layers for interconnects

Growing community of inventors

Cambridge, MA, United States of America

Roy Gerald Gordon