Micron Technology Incorporated

Ayar Labs, Inc.

Massachusetts Institute of Technology

Roy Edward Meade

Gurtej S Sandhu

Vladimir Marko Stojanovic

Mark Taylor Wade

Chen Sun

Alexandra Carroll Wright

Milos A Popovic

John Fini

Rajeev J Ram

Derek Van Orden

Sumeet C Pandey

Lei Bi

Zvi Sternberg

Ofer Tehar-Zahav

Michael Davenport

John A Smythe

Jason Scott Orcutt

Jeffrey Michael Shainline

Forrest G Sedgwick

Shahab Ardalan

Karan Mehta

Chong Zhang

Efraim Megged

Bhaskar Srinivasan

Chen Li

Hugo Saleh

Charles Wuischpard

Haiwei Lu

Chandra V Mouli

Sanh D Tang

Scott E Sills

John K Zahurak

David H Wells

Michael P Violette

Yushi Hu

Song Guo

Anatol Khilo

Ashonita A Chavan

Qian Tao

Van Derek Orden

A package assembly includes a silicon photonics chip having an optical waveguide exposed at a first side of the chip and an optical fiber coupling region formed along the first side of the chip. The package assembly includes a mold compound structure formed to extend around second, third, and fourth sides of the chip. The mold compound structure has a vertical thickness substantially equal to a vertical thickness of the chip. The package assembly includes a redistribution layer formed over the chip and over a portion of the mold compound structure. The redistribution layer includes electrically conductive interconnect structures to provide fanout of electrical contacts on the chip to corresponding electrical contacts on the redistribution layer. The redistribution layer is formed to leave the optical fiber coupling region exposed. An optical fiber is connected to the optical fiber coupling region in optical alignment with the optical waveguide within the chip.

Fiber attach enabled wafer level fanout

A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.

Electronic systems including two-dimensional material structures

A photonic chip includes a substrate, an electrical isolation region formed over the substrate, and a front end of line (FEOL) region formed over the electrical isolation region. The photonic chip also includes an optical coupling region. The electrical isolation region and the FEOL region and a portion of the substrate are removed within the optical coupling region. A top surface of a the substrate within the optical coupling region includes a plurality of grooves configured to receive and align a plurality of optical fibers. The grooves are formed at a vertical depth within the substrate to provide for alignment of optical cores of the plurality of optical fibers with the FEOL region when the plurality of optical fibers are positioned within the plurality of grooves within the optical coupling region.

Apparatus for optical fiber-to-photonic chip connection and associated methods

A plurality of lid structures include at least one lid structure configured to overlie one or more heat sources within a multi-chip-module and at least one lid structure configured to overlie one or more temperature sensitive components within the multi-chip-module. The plurality of lid structures are configured and positioned such that each lid structure is separated from each adjacent lid structure by a corresponding thermal break. A heat spreader assembly is positioned in thermally conductive interface with the plurality of lid structures. The heat spreader assembly is configured to cover an aggregation of the plurality of lid structures. The heat spreader assembly includes a plurality of separately defined heat transfer members respectively configured and positioned to overlie the plurality of lid structures. The heat spreader assembly is configured to limit heat transfer between different heat transfer members within the heat spreader assembly.

Thermal management system for multi-chip-module and associated methods

A beam steering structure includes an alignment structure shaped to receive and align an optical fiber such that an axis of a core of the optical fiber is oriented in a first direction. The beam steering structure includes an end portion having an angled optical surface oriented at a non-zero angle relative to the first direction. The end portion is shaped and positioned so that light propagating along the first direction from the optical fiber passes through the end portion to reach the angled optical surface. A reflecting system is positioned on the angled optical surface across the first direction. The reflecting system is configured to reflect incident light propagating along the first direction into a first reflected beam of a first polarization and a second reflected beam of a second polarization. The first and second reflected beams are directed into first and second optical communication channels, respectively.

Beam steering structure with integrated polarization splitter

A photoresist material is deposited, patterned, and developed on a backside of a wafer to expose specific regions on the backside of chips for etching. These specific regions are etched to form etched regions through the backside of the chips to a specified depth within the chips. The specified depth may correspond to an etch stop material. Etching of the backside of the wafer can also be done along the chip kerf regions to reduce stress during singulation/dicing of individual chips from the wafer. Etching of the backside of the chips can be done with the chips still part of the intact wafer. Or, the wafer having the pattered and developed photoresist on its backside can be singulated/diced before etching through the backside of the individual chips. The etched region(s) formed through the backside of a chip can be used for attachment of optical component(s) to the chip.

Wafer-level etching methods for planar photonics circuits and devices

A multi-chip package assembly includes a substrate, a first semiconductor chip attached to the substrate, and a second semiconductor chip attached to the substrate, such that a portion of the second semiconductor chip overhangs an edge of the substrate. A first v-groove array for receiving a plurality of optical fibers is present within the portion of the second semiconductor chip that overhangs the edge of the substrate. An optical fiber assembly including the plurality of optical fibers is positioned and secured within the first v-groove array of the second semiconductor chip. The optical fiber assembly includes a second v-groove array configured to align the plurality of optical fibers to the first v-groove array of the second semiconductor chip. An end of each of the plurality of optical fibers is exposed for optical coupling within an optical fiber connector located at a distal end of the optical fiber assembly.

Multi-chip packaging of silicon photonics

A semiconductor wafer includes a semiconductor chip that includes a photonic device. The semiconductor chip includes an optical fiber attachment region in which an optical fiber alignment structure is to be fabricated. The optical fiber alignment structure is not yet fabricated in the optical fiber attachment region. The semiconductor chip includes an in-plane fiber-to-chip optical coupler positioned at an edge of the optical fiber attachment region. The in-plane fiber-to-chip optical coupler is optically connected to the photonic device. A sacrificial optical structure is optically coupled to the in-plane fiber-to-chip optical coupler. The sacrificial optical structure includes an out-of-plane optical coupler configured to receive input light from a light source external to the semiconductor chip. At least a portion of the sacrificial optical structure extends through the optical fiber attachment region.

Systems and methods for wafer-level photonic testing

An optical input/output chiplet is disposed on a first package substrate. The optical input/output chiplet includes one or more supply optical ports for receiving continuous wave light. The optical input/output chiplet includes one or more transmit optical ports through which modulated light is transmitted. The optical input/output chiplet includes one or more receive optical ports through which modulated light is received by the optical input/output chiplet. An optical power supply module is disposed on a second package substrate. The second package substrate is separate from the first package substrate. The optical power supply module includes one or more output optical ports through which continuous wave laser light is transmitted. A set of optical fibers optically connect the one or more output optical ports of the optical power supply module to the one or more supply optical ports of the optical input/output chiplet.

Chip-to-chip optical data communication system

A remote memory system includes a substrate of a multi-chip package, an integrated circuit chip connected to the substrate, and an electro-optical chip connected to the substrate. The integrated circuit chip includes a high-bandwidth memory interface. An electrical interface of the electro-optical chip is electrically connected to the high-bandwidth memory interface. A photonic interface of the electro-optical chip is configured to optically connect with an optical link. The electro-optical chip includes at least one optical macro that converts outgoing electrical data signals received through the electrical interface from the high-bandwidth interface into outgoing optical data signals. The optical macro transmits the outgoing optical data signals through the photonic interface to the optical link. The optical macro also converts incoming optical data signals received through the photonic interface into incoming electrical data signals. The optical macro transmits the incoming electrical data signals through the electrical interface to the high-bandwidth memory interface.

Remote memory architectures enabled by monolithic in-package optical i/o

A vertical integrated photonics chiplet assembly includes a package substrate and an external device connected to a top surface of the package substrate. A photonics chip is disposed within the package substrate. The photonics chip includes optical coupling devices positioned at a top surface of the photonics chip. A plurality of conductive via structures are disposed within the package substrate in electrical connection with electrical circuits within the photonics chip. The plurality of conductive via structures are electrically connected through the package substrate to the external device. An opening is formed through the top surface of the substrate to expose a portion of the top surface of the photonics chip at which the optical coupling devices are positioned. An optical fiber array is disposed and secured within the opening such that a plurality of optical fibers of the optical fiber array optically couple to the optical coupling devices.

Vertical integrated photonics chiplet for in-package optical interconnect

An intact semiconductor wafer (wafer) includes a plurality of die. Each die has a top layer including routings of conductive interconnect structures electrically isolated from each other by intervening dielectric material. A top surface of the top layer corresponds to a top surface of the wafer. Below the top layer, each die has a device layer including optical devices and electronic devices. Each die has a cladding layer below the device layer and on a substrate of the wafer. Each die includes a photonic test port within the device layer. For each die, a light transfer region is formed within the intact wafer to extend through the top layer to the photonic test port within the device layer. The light transfer region provides a window for transmission of light into and out of the photonic test port from and to a location on the top surface of the wafer.

Photonic systems to enable top-side wafer-level optical and electrical test

A redistribution layer is formed on a carrier wafer. A cavity is formed within the redistribution layer. An electro-optical die is flip-chip connected to the redistribution layer. A plurality of optical fiber alignment structures within the electro-optical die is positioned over and exposed to the cavity. Mold compound material is disposed over the redistribution layer and the electro-optical die. A residual kerf region of the electro-optical die interfaces with the redistribution layer to prevent mold compound material from entering into the optical fiber alignment structures and the cavity. The carrier wafer is removed from the redistribution layer. The redistribution layer and the mold compound material are cut to obtain an electro-optical chip package that includes the electro-optical die. The cutting removes the residual kerf region from the electro-optical die to expose the plurality of optical fiber alignment structures and the cavity at an edge of the electro-optical chip package.

Chip-last wafer-level fan-out with optical fiber alignment structure

An interposer device includes a substrate that includes a laser source chip interface region, a silicon photonics chip interface region, an optical amplifier module interface region. A fiber-to-interposer connection region is formed within the substrate. A first group of optical conveyance structures is formed within the substrate to optically connect a laser source chip to a silicon photonics chip when the laser source chip and the silicon photonics chip are interfaced to the substrate. A second group of optical conveyance structures is formed within the substrate to optically connect the silicon photonics chip to an optical amplifier module when the silicon photonics chip and the optical amplifier module are interfaced to the substrate. A third group of optical conveyance structures is formed within the substrate to optically connect the optical amplifier module to the fiber-to-interposer connection region when the optical amplifier module is interfaced to the substrate.

Laser module for optical data communication system within silicon interposer

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Boise, ID, United States of America

Roy Edward Meade