Micron Technology Incorporated

Round Rock Research, LLC

Keystone Technology Solutions, LLC

Roy Edgar Greeff

David K Ovard

Timothy Mowry Hollis

Matthew B Leslie

Terry R Lee

George Edward Pax

Brent Keeth

Owen R Fay

Chan H Yoo

Thomas Hein

Martin Brox

Wolfgang Anton Spirkl

Michael Dieter Richter

Peter Mayer

Freddie W Smith

Troy A Manning

Brian L Johnson

Victor Y Tsai

Ronnie M Harrison

Joo S Choi

Dragos Dimitriu

Robert N Leibowitz

Greg King

Mark E Tuttle

John R Tuttle

Brian W Huber

Gary L Howe

Dirgha Khatri

Travis E Swanson

Vijay Vankayala

Brian Gross

Ron Harrison

Robert N Bowitz

Apparatuses and methods for coupling semiconductor devices are disclosed. In a group of semiconductor devices (e.g., a stack of semiconductor devices), a signal is provided to a point of coupling at an intermediate semiconductor device of the group, and the signal is propagated away from the point of coupling over different (e.g., opposite) signal paths to other semiconductor devices of the group. Loading from the point of coupling at the intermediate semiconductor device to other semiconductor devices of a group may be more balanced than, for example, having a point of coupling at semiconductor device at an end of the group (e.g., a lowest semiconductor device of a stack, a highest semiconductor device of the stack, etc.) and providing a signal therefrom. The more balanced topology may reduce a timing difference between when signals arrive at each of the semiconductor devices.

Apparatuses and methods for coupling a plurality of semiconductor devices

Methods, systems, and devices for channel modulation for a memory device are described. A system may include a memory device and a host device coupled with the memory device. The system may be configured to communicate a first signal modulated using a first modulation scheme and communicate a second signal that is based on the first signal and that is modulated using a second modulation scheme. The first modulation scheme may include a first quantity of voltage levels that span a first range of voltages, and the second modulation scheme may include a second quantity of voltage levels that span a second range of voltages different than (e.g., smaller than) the first range of voltages. The first signal may include write data carried over a data channel, and the second signal may include error detection information based on the write data that is carried over an error detection channel.

Channel modulation for a memory device

Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configured to substantially match the capacity of the narrower, higher speed host interface. In some examples, the buffer interface may be configured to provide multiple sub-channel interfaces each coupled to one or more regions within the memory structure and configured to facilitate data recovery in the event of a failure of some portion of the memory structure. Selected example memory devices, systems and methods include an individual DRAM die, or one or more stacks of DRAM dies coupled to a buffer die.

Memory device interface and method

Apparatus and methods are described, including memory devices and systems. Memory devices, systems and methods may include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configured to substantially match the capacity of the narrower, higher speed host interface. In some cases, the buffer interface may be configured to provide multiple sub-channel interfaces each coupled to one or more regions within the memory structure and configured to facilitate data recovery in the event of a failure of some portion of the memory structure. Selected memory devices, systems and methods may include an individual DRAM die, or one or more stacks of DRAM dies coupled to a buffer die.

A memory subsystem architecture that includes two register clock driver (RCD) devices to increase a number of output drivers for signaling memories of the memory subsystem is described herein. In a two RCD device implementation, first and second RCD devices may contemporaneously provide first subchannel C/A information and second subchannel C/A information, respectively, to respective first and second group of memories of the memory subsystem responsive to a common clock signal. Because each of the first and second RCD devices operate responsive to the common clock signal, operation of the first and second RCD devices may be synchronized such that all subchannel driver circuits drive respective subchannel C/A information contemporaneously.

Multiple register clock driver loaded memory subsystem

Apparatuses and methods for coupling semiconductor devices are disclosed. Terminals (e.g., die pads) of a plurality of semiconductor devices may be coupled in a daisy chain manner through conductive structures that couple one or more terminals of a semiconductor device to two conductive bond pads. The conductive structures may be included in a redistribution layer (RDL) structure. The RDL structure may have a 'U' shape in some embodiments of the disclosure. Each end of the “U” shape may be coupled to a respective one of the two conductive bond pads, and the terminal of the semiconductor device may be coupled to the RDL structure. The conductive bond pads of a semiconductor device may be coupled to conductive bond pads of other semiconductor devices by conductors (e.g., bond wires). As a result, the terminals of the semiconductor devices may be coupled in a daisy chain manner through the RDL structures, conductive bond pads, and conductors.

Memory devices, systems and methods include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configured to substantially match the capacity of the narrower, higher speed host interface. In some configurations, the buffer interface may be configured to provide multiple sub-channel interfaces each coupled to one or more regions within the memory structure and configured to facilitate data recovery in the event of a failure of some portion of the memory structure. Selected memory devices, systems and methods include an individual DRAM die, or one or more stacks of DRAM dies coupled to a buffer die.

A memory subsystem architecture that includes clock signal routing architecture to split a clock signal to support two register clock driver (RCD) devices. The clock signal routing architecture may include clock signal splitter circuit that enables contemporaneous provision of a common clock signal to the two register clock driver devices. The clock signal splitter circuit may have three legs: a first leg to receive the clock signal from an external bus, and two similar legs to route the clock signal to the RCD devices.

Memory subsystem register clock driver clock teeing

Apparatuses and methods for multi-level communication architectures are disclosed herein. An example apparatus may include a driver circuit configured to convert a plurality of bitstreams into a plurality of multilevel signals. A count of the plurality of bitstreams is greater than count of the plurality of multilevel signals. The driver circuit further configured to drive the plurality of multilevel signals onto a plurality of signal lines using individual drivers. A driver of the individual drivers is configured to drive more than two voltages.

Apparatuses and methods for encoding and decoding of signal lines for multi-level communication architectures

Methods, systems, and apparatuses related to configured dual register clock driver (RCD) devices on a single memory subsystem using different configuration information are described. In some examples, configuration of the two RCD devices with different configuration information may include use of a serial data bus to receive and store first RCD configuration data, which is provided to both of the RCD devices to configure one or more parameters of each respective RCD device. One of the RCD devices may receive second configuration data via a command and address bus to independently update the one or more configuration parameters of one of the two RCD devices.

Configuring multiple register clock drivers of a memory subsystem

Embodiments of the disclosure include signal processing methods to reduce crosstalk between signal lines of a channel bus using feed forward equalizers (FFEs) configured smear pulse response energy transmitted on signal lines of the channel to reduce pulse edge rates. The coefficients for the FFE may be based on crosstalk interference characteristics. Smearing or spreading pulse response energy across a longer time period using a FFE increases inter-symbol interference (ISI). To counter increased inter-symbol interference caused by smearing pulse response energy, receivers configured to recover symbol data transmitted on the channel bus may each include respective decision-feedback equalizers (DFEs) that are configured to filter ISI from transmitted symbols based on previous symbol decisions of the channel. The combination of the FFE configured to smear pulse responses and the DFE to filter ISI may improve data eye quality for recovery of transmitted data on a channel bus when crosstalk dominates noise.

Apparatuses and methods for pulse response smearing of transmitted signals

Apparatuses and methods for coupling semiconductor devices are disclosed. Terminals (e.g., die pads) of a plurality of semiconductor devices may be coupled in a daisy chain manner through conductive structures that couple one or more terminals of a semiconductor device to two conductive bond pads. The conductive structures may be included in a redistribution layer (RDL) structure. The RDL structure may have a 'U' shape in some embodiments of the disclosure. Each end of the 'U' shape may be coupled to a respective one of the two conductive bond pads, and the terminal of the semiconductor device may be coupled to the RDL structure. The conductive bond pads of a semiconductor device may be coupled to conductive bond pads of other semiconductor devices by conductors (e.g., bond wires). As a result, the terminals of the semiconductor devices may be coupled in a daisy chain manner through the RDL structures, conductive bond pads, and conductors.

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Boise, ID, United States of America

Roy Edgar Greeff