Siliconix Technology C. V.

International Rectifier Corporation

Vishay-siliconix

Rossano Carta

Luigi Merlin

Laura Bellemo

Giovanni Richieri

Carmelo Sanfilippo

Paolo Mercaldi

A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.

Solderable top metal for silicon carbide semiconductor devices

A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.

Power semiconductor switch with plurality of trenches

A silicon carbide device has a termination region that includes a mesa region that links the termination region to an active area of the device and that includes one or more trenches.

Termination for SiC trench devices

An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.

Schottky diode with improved surge capability

A process for forming a Schottky barrier to silicon to a barrier height selected at a value between 640 meV and 840 meV employs the deposition of a platinum or nickel film atop the silicon surface followed by the deposition of the other of a platinum or nickel film atop the first film. The two films are then exposed to anneal steps at suitable temperatures to cause their interdiffusion and an ultimate formation of NiSi and PtSi contacts to the silicon surface. The final silicide has a barrier height between that of the Pt and Ni, and will depend on the initial thicknesses of the Pt and Ni films and annealing temperature and time. Oxygen is injected into the system to form an SiOpassivation layer to improve the self aligned process.

Process for forming schottky rectifier with PtNi silicide schottky barrier

A process for forming a trench Schottky barrier device includes the forming of an oxide layer within the trenches in the surface of a silicon wafer, and then depositing a full continuous metal barrier layer over the full upper surface of the wafer including the trench interiors and the mesas between trenches with a barrier contact made to the mesas only. Palladium, titanium or any conventional barrier metal can be used.

Trench Schottky device with single barrier

Power semiconductor switch

A mask structure and process for forming trenches in a silicon carbide or other wafer, and for implanting impurities into the walls of the trenches using the same mask where the mask includes a thin aluminum layer and a patterned hard photoresist mask. A thin LTO oxide may be placed between the metal layer and the hard photoresist mask.

Mask structure for manufacture of trench type semiconductor device

A process for forming a Schottky barrier to silicon to a barrier height selected at a value between 640 meV and 840 meV employs the deposition of a platinum or nickel film atop the silicon surface followed by the deposition of the other of a platinum or nickel film atop the first film. The two films are then exposed to anneal steps at suitable temperatures to cause their interdiffusion and an ultimate formation of NiSi and PtSi contacts to the silicon surface. The final silicide has a barrier height between that of the Pt and Ni, and will depend on the initial thicknesses of the Pt and Ni films and annealing temperature and time. Oxygen is injected into the system to form and SiO2 passivation layer to improve the self aligned process.

Process for forming Schottky rectifier with PtNi silicide Schottky barrier

A trench type junction barrier rectifier has silicon dioxide spacers at the bottom of trenches in a silicon surface and beneath the bottom of a conductive polysilicon filler in the trench. A Schottky barrier electrode is connected to the tops of the mesas and the tops of the polysilicon fillers. Further oxide spacers may be formed in the length of the polysilicon fillers.

Trench type Schottky rectifier with oxide mass in trench bottom

A trench MOS Schottky barrier device has a metal oxide gate dielectric such as TiSi lining the trench wall to increase the efficiency of the elemental cell and to improve depletion in the mesa during reverse bias. A reduced mask process is used in which a single layer of titanium or other metal is deposited on an underlying gate oxide layer on the trench walls and directly atop the mesa between adjacent trenches. A common thermal treatment causes the Ti to diffuse into the SiOgate oxide to form the TiOgate and to form the TiSi Schottky barrier on the top surface of the mesa.

Growing community of inventors

Turin, Italy

Rossano Carta