Stmicroelectronics S.r.l.

Rossana Scaldaferri

Valeria Casuscelli

Flavio Francesco Villa

Luigi Giuseppe Occhipinti

Dino Faralli

Maria Fortuna Bevilacqua

Andrea Di Matteo

Danilo Mascolo

Raffaele Vecchione

Giovanna Salzillo

Teresa Napolitano

Maria Viviana Volpe

Nunzia Malagnino

A process for manufacturing a MEMS piezoelectric device includes: forming a membrane at a first surface of wafer of semiconductor material further having a second surface (the first and second surfaces being opposite along a vertical axis and extending parallel to a horizontal plane formed by first and second horizontal axes); forming a cavity within the wafer so that the membrane is suspended above the cavity; forming a piezoelectric material layer above a first surface of the membrane; forming an electrode arrangement in contact with the piezoelectric material layer; and forming a proof mass coupled to a second surface of the membrane opposite to the first surface along the vertical axis. The proof mass deforms the membrane in response to environmental mechanical vibrations. Forming the proof mass includes forming a connection element at a central position between the membrane and the proof mass in the direction of the vertical axis.

MEMS piezoelectric device and corresponding manufacturing process

A MEMS piezoelectric device includes a monolithic semiconductor body having first and second main surfaces extending parallel to a horizontal plane formed by first and second horizontal axes. A housing cavity is arranged within the monolithic semiconductor body. A membrane is suspended above the housing cavity at the first main surface. A piezoelectric material layer is arranged above a first surface of the membrane with a proof mass coupled to a second surface, opposite to the first surface, along the vertical axis. An electrode arrangement is provided in contact with the piezoelectric material layer. The proof mass causes deformation of the piezoelectric material layer in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis.

The present disclosure relates to a sensor for detecting hydrogen ions in an aqueous solution comprising a support, a reference electrode, a working electrode and a counter electrode supported by said support, the reference electrode being made of a material comprising silver and silver chloride, the counter electrode being made of a conductive material. The working electrode comprises a substrate and a layer made of an inherently electrically conductive polymer of the polythiophene or polyaniline (PANI) or polypyrrole class.

Sensor for detecting hydrogen ions in an aqueous solution

A method is for forming a vertical interconnection through a dielectric layer between upper and lower electrically conductive layers of an integrated circuit. The method includes forming an opening through the dielectric layer and placing a solidifiable electrically conductive filler into the opening via a printing technique. The solidifiable electrically conductive filler is solidified to thereby form a solidified electrically conducting filler in the opening. A metallization layer is formed over the dielectric layer and the solidified electrically conducting filler to thereby form the vertical interconnection through the dielectric layer between the upper and lower electrically conductive layers of the integrated circuit.

Low cost method of fabrication of vertical interconnections combined to metal top electrodes

A method manufactures a single electron transistor device by electro-migration of nanocluster wherein said nanoclusters are metallically passivated and forced to assembly over a lithographic patterned substrate under control of a non homogeneous electric field at room temperature. A controlled migration and the desired location of the metallic passivated nanoclusters are based on a dielectrophoretic process.

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Sapri, Italy

Rossana Scaldaferri