Ekc Technology Inc.

Simon Fraser University

General Fusion Inc.

Ross Henry Hill

Xin Zhang

Wai Mun Lee

David J Maloney

Michael A Fury

Paul J Roman, Jr

Sharon L Blair

Paul J Roman

Yo Mao Shi

Daniel Gelbart

Michel Georges Laberge

Seigi Suh

Denis J Connor

Harold O Madsen

Donna Hohertz

Leo G Svendsen

Shyama P Mukheriee

Sean Barstow

Grace Li

Clifford Henderson

Juan Pablo Bravo-Vasquez

Haixiong Ruan

Bentley J Palmer

Alfred A Avey, Jr

Chu-Hui W Chu

Juan-Pablo Bravo-Vasquez

Meihua Gao

Wai L Law

Juan Pablo Bravo Vasquez

An apparatus for generating a pressure wave in a liquid medium is disclosed. The apparatus includes a plurality of pressure wave generators having respective moveable pistons, the pistons having respective control rods connected thereto. The apparatus also includes a plurality of transducers coupled to the liquid medium and means for causing the pistons of respective ones of the plurality of the pressure wave generators to be accelerated toward respective ones of the plurality of transducers. The apparatus further includes means for causing restraining forces to be applied to respective control rods to cause respective pistons to impact respective transducers at respective desired times and with respective desired amounts of kinetic energy such that the respective desired amounts of kinetic energy are converted into a pressure wave in the liquid medium.

Pressure wave generator and controller for generating a pressure wave in a liquid medium

The invention generally encompasses a method for forming a pattern on a substrate. The method comprises applying a precursor comprising at least one metal to a substrate to form a precursor layer, exposing a predetermined portion of the precursor layer and developing the predetermined portion of the precursor layer. The developing step removes, or at least substantially removes, the predetermined portion from the substrate, thereby forming a pattern on the substrate that comprises a remaining portion of the precursor. In one embodiment, the precursor layer comprises Ti(PrO)(EAA).

Method of depositing patterned films of materials using a positive imaging process

The present invention involves the formation of titanium carbonate films that exhibit improved hydrolytic stability and photosensitivity. Such films can be used in semiconductor processing to deposit titanium and titanium oxide layers on a substrate and to form patterns without the use of photoresists. Preferred titanium carboxylates are non-branched and branched carboxylates wherein the alkoxide component is an alcohol, branched titanium carboxylates wherein the alkoxide component is a diol, non-branched and branched titanium alpha hydroxy carboxylate compounds, and titanium dicarboxylate compounds.

Titanium carboxylate films for use in semiconductor processing

The invention is directed to a photoresist-free method for depositing films composed of metals, such as copper or silica, or their oxides from metal complexes. More specifically, the method involves applying an amorphous film of a metal complex to a substrate. The metal complexes have a metal and a photo-degradable ligand. A preferred ligand is acac or alkyl-acac, expecially in combination with acetate ligands. These films, upon, for example, thermal, photochemical or electron beam irradiation may be converted to the metal or its oxides. By using either directed light or electron beams, this may lead to a patterned metal or metal oxide film in a single step. Low temperature baking may be used to remove residual organics from the deposited film. If silica is the metal, the deposited film has excellent smoothness and dielectric properties.

Photolytic conversion process to form patterned amorphous film

A photoresist-free method for making patterned films of metal oxides, metals, or other metal containing compounds is described. The method involves applying a thin film coating of a metal complex, resulting in the formation of a liquid crystal film. This film can be photolyzed resulting in a chemical reaction which deposits a metal or metal oxide film. The metal complex used is photoreactive and undergoes a chemical reaction in the presence of light of a suitable wavelength. The end product of the reactions depends upon the atmosphere in which the reactions take place. Metal oxide films may be made in air. Patterned films may be made by exposing only selected portions of the film to light. Patterns of two or more materials may be laid down from the same film by exposing different parts of the film to light in different atmospheres.

Method for the deposition of materials from mesomorphous films

This invention comprises methods for making nanostructured and nanoporous thin film structures of various compositions. These films can be directly patterned. In these methods, precursor films are deposited on a surface and different components of the precursor film are reacted under selected conditions, forming a nanostructured or nanoporous film. Such films can be used in a variety of applications, for example, low k dielectrics, sensors, catalysts, conductors or magnetic films. Nanostructured films can be created: (1) using one precursor component and two reactions, (2) using two or more components based on differential rates of photochemical conversion, (3) using two precursors based on the thermal sensitivity of one precursor and the photochemical sensitivity of the other, and (4) by photochemical reaction of a precursor film and selected removal of a largely unreacted component from the film.

Method of depositing nanostructured films with embedded nanopores

The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus include a pre-conversion step or section, and a step or section for substantial conversion of a portion of material from the pre-conversion step or section into the form of a predetermined pattern, wherein this substantial conversion results in a metal-containing patterned layer on the substrate.

Method of and apparatus for substrate pre-treatment

The invention is directed to a photoresist-free method for depositing films composed of metals, such as copper, or its oxides from metal complexes. More specifically, the method involves applying an amorphous film of a metal complex to a substrate. The metal complexes have the formula M L X , wherein M is selected from the group consisting of Ti, V, Cr, Au, Mn, Fe, Co, Ni, Cu, Zn, Si, Sn, Li, Na, K, Ba, Sr, Mo, Ru, Pd, Pt, Re, Ir, and Os; L is a ligand of the formula (R NCR&prime; CR&Prime; O), wherein R, R&prime; and R&Prime; are independently selected from H, C H , and C H A B , wherein A and B are independently selected from main group elements and f, g, h, n, m, x and y represent integers; and X is an anion independently selected from N , NCO, NO , NO , Cl, Br, I, CN, OH, H and CH . These films, upon, for example, thermal, photochemical or electron beam irradiation may be converted to the metal or its oxides. By using either directed light or electron beams, this may lead to a patterned metal or metal oxide film in a single step.

Method for depositing metal and metal oxide films and patterned films

The present invention involves fabrication of a hard mask. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Another embodiment of the present invention is a method of forming an etched pattern in a substrate. A further embodiment of the present invention is a method of forming an implanted region in a substrate. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.

Method of making electronic materials

A method for depositing nanoparticles in a thin film through the dispersion of such nanoparticles in a precursor solution which is deposited on a substrate and converted into a metal or metal oxide film. The resulting metal or metal oxide film will contain embedded nanoparticles. Such films can be used in a variety of applications such as diffusion barriers, electrodes for capacitors, conductors, resistors, inductors, dielectrics, or magnetic materials. The nanoparticle material may be selected by one skilled in the art based on the particular application.

Methods for the lithographic deposition of materials containing nanoparticles

The invention is directed to a photoresist-free method for depositing films composed of metals, such as copper, or its oxides from metal complexes. More specifically, the method involves applying an amorphous film of a metal complex to a substrate. The metal complexes have the formula M L X , wherein M is selected from the group consisting of Ti, V, Cr, Au, Mn, Fe, Co, Ni, Cu, Zn, Si, Sn, Li, Na, K, Ba, Sr, Mo, Ru, Pd, Pt, Re, Ir, and Os, L is a ligand of the formula (R NCR &prime;CO) wherein R and R&prime; are independently selected from H, C H and C H A B wherein A and B are independently selected from main group elements and f, g, h, n, m, x and y represent integers and wherein X is an anion independently selected from N , NCO, NO , NO , Cl, Br, I, CN, OH, H and CH . These films, upon, for example, thermal, photochemical or electron beam irradiation may be converted to the metal or its oxides. By using either directed light or electron beams, this may lead to a patterned metal or metal oxide film in a single step.

A photoresist-free method for making patterned films of metal oxides, metals, or other metal containing compounds is described. The method involves applying an amorphous film of a metal complex to a substrate. The film may be conveniently applied by spin coating using standard industry techniques. The metal complex used is photoreactive and undergoes a low temperature chemical reaction in the presence of light of a suitable wavelength. The end product of the reactions depends upon the atmosphere in which the reactions take place. Metal oxide films may be made in air. Patterned films may be made by exposing only selected portions of the film to light. Patterns of two or more materials may be laid down from the same film by exposing different parts of the film to light in different atmospheres. The resulting patterned film is generally planar. Separate planarization steps are not generally required.

Growing community of inventors

Coquitlam, Canada

Ross Henry Hill