Texas Instruments Corporation

Semtech Corporation

Ross Elliot Teggatz

Thomas Richard Maher

Alexander Noam Teutsch

Timothy John Legat

Paul James Garrity

Joseph A Devore

Antony Eugene Brinlee

An antenna is disclosed that includes a ground plane extending in a first direction on a substrate and a radiating element occupying a same plane as the ground plane on the substrate, and coupled to the ground plane, the radiating element comprising a first portion with a first end and a second end extending in a substantially parallel direction to the ground plane, a feed line coupled to the first end of the first portion of the radiating element and extending in a substantially perpendicular direction from the first portion of the radiating element and a second portion having a third end and a fourth end, wherein the third end is coupled to the ground plane and the fourth end is coupled to the radiating element at a point between the first end and the second end.

Single layer antenna

A semiconductor device suitable for use in a pressure sensor is disclosed. A uniformly thin die is provided by chemically etching a back side of a wafer. Piezoelectric elements formed integrally within the die generate electrical signals in response to flexing the die. Conductive leads formed integrally within the die electrically communicate the generated electrical signals to support circuitry formed integrally within the die proximate the piezoelectric elements. In an example embodiment, the piezoresistive elements take the form of silicon resistors formed integrally via doping and diffusion in a Wheatstone bridge configuration. In one application, the die serves as a deformable diaphragm, seated atop an aperture of a threaded pressure sensor housing.

Semiconductor device with integrated piezoelectric elements and support circuitry

The formation of a semiconductor sensing device is disclosed, where the device can be used to sense pressure, for example. The device is formed by etching the entire backside of a semiconductor substrate or wafer. This streamlines the fabrication process by omitting a number of steps that would otherwise be required to selectively etch certain locations of the substrate. This also improves device performance and compactness by allowing associated support circuitry to be formed closer to a sensing region, and more particularly piezoelectric elements of the sensing region.

Full backside etching for pressure sensing silicon

A circuit and method are provided for accurate and adjustable current limiting/sensing in a power IC ( ). In particular, a current limiting/sensing circuit ( ) and method of use are provided that substitutes a transistor (MD ) in place of a resistor. Consequently, all of the components (MD , MD , MD ) in the IC ( ) may be identical transistors, which may be fabricated by one process and integrated in one power structure. Therefore, process variations from device to device and errors due to thermal gradients between components may be minimized, thereby reducing the complexity and fabrication costs of the power ICs. Additionally, a user may readily adjust the trip/sensing point of the current limiting circuit ( ) without having to physically alter individual components in the IC ( ).

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McKinney, TX, United States of America

Ross Elliot Teggatz