Applied Materials, Inc.

Varian Semiconductor Equipment Associates, Inc.

Ross Bandy

Morgan Evans

Rutger Meyer Timmerman Thijssen

Charles T Carlson

Ryan Magee

Kevin R Anglin

A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate.

Method and device for a carrier proximity mask

Methods for processing of a workpiece are disclosed. The actual rate at which different portions of an ion beam can process a workpiece, referred to as the processing rate profile, is determined by measuring the amount of material removed from, or added to, a workpiece by the ion beam as a function of ion beam position. An initial thickness profile of a workpiece to be processed is determined. Based on the initial thickness profile, a target thickness profile, and the processing rate profile of the ion beam, a first set of processing parameters are determined. The workpiece is then processed using this first set of processing parameters. In some embodiments, an updated thickness profile is determined after the first process and a second set of processing parameters are determined. A second process is performed using the second set of processing parameters. Optimizations to improve throughput are also disclosed.

Workpiece processing technique

An apparatus to control processing conditions for a substrate. The apparatus may include a current measurement component to perform a plurality of extraction current measurements for extraction current in a processing apparatus housing the substrate, the extraction current comprising ions extracted from a plasma and directed to the substrate; and an endpoint detection component comprising logic to generate an endpoint detection signal based upon a change in extraction current during the plurality of extraction current measurements.

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Milton, MA, United States of America

Ross Bandy