Intel Corporation

Roshini Sachithanandan

Peter Baumgartner

Uwe Hodel

Richard Geiger

Walther Lutz

Georgios Panagopoulos

Johannes Xaver Rauh

Richard Hudeczek

Alexander Bechtold

Carla Moran Guizan

IC devices including transmission lines are disclosed. An example IC device includes two electrically conductive layers (first and second layers) and a support structure between the two electrically conductive layers. The first layer is coupled to transistors over or at least partially in the support structure. A shield of a transmission is placed in the first layer. Conductors of the transmission line are placed in the second layer and are coupled to the first layer by TSVs. Another example IC device includes three electrically conductive layers (first, second, and third layers). The first layer is coupled to transistors over or at least partially in the support structure. A shield of a transmission line is placed in the second layer and conductors of the transmission line are placed in the third layer. The conductors are coupled to the first layer by TSVs and coupled to the second layer by vias.

Integrated circuit device comprising tunable transmission line using buried power rail technology

Growing community of inventors

Bavaria, Germany

Roshini Sachithanandan