Seh America, Inc.

Rosemary T Nettleton

Aaron W Johnson

Robert L Faulconer

A method of growing a crystalline ingot having a <110> orientation, such as a dislocation-free (&ldquo;DF&rdquo;) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a <110> crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2.5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2.5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a <110> crystal direction and a diameter of at least about 200 mm.

Method of growing large-diameter dislocation-free <110> crystalline ingots

Method of growing large-diameter dislocation-free<110> crystalline ingots

A water spray subsystem apparatus and method of treating discharge gas designed for use in the gas discharge zone of a Czochralski crystal growing apparatus. The subsystem composes a structure containing or defining a water spray body, which is capable of providing a water spray into the discharge gas stream from the CZ chamber. The water is supplied into the discharge gas in the form of a spray or a mist in order to provide for intimate contact between the droplets of sprayed water and the discharge gas stream. Contacting the discharge gas stream with the water spray cools the gas stream, causes the reaction of SiO to SiO , and causes the precipitation of cooled SiO and SiC out of the discharge gas stream.

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Vancouver, WA, United States of America

Rosemary T Nettleton