Texas Instruments Corporation

Rose Alyssa Keagy

Satyavolu Srinivas Papa Rao

Timothy Alan Rost

Edmund David Burke

An embodiment of the invention is a capacitor comprising a bottom electrodecoupled to a first interconnectof the top metal levela capacitor dielectricsidewallsand a top electrodecoupled to a second interconnectof the top metal levelAnother embodiment of the invention is a method of manufacturing a capacitor using a first maskto form a material stack that includes a bottom electrodecoupled to a first interconnectof the top metal levela capacitor dielectricand a partial top electrodeThe method further includes using a second maskto form a complete top electrode coupled to a second interconnectof the top metal level

Dual mask capacitor for integrated circuits

An embodiment of the invention is a capacitor comprising a bottom electrodecoupled to a first interconnectof the top metal level, a capacitor dielectric, sidewalls, and a top electrodecoupled to a second interconnectof the top metal level. Another embodiment of the invention is a method of manufacturing a capacitor using a first maskto form a material stack that includes a bottom electrodescoupled to a first interconnectof the top metal level, a capacitor dielectric, and a partial top electrode. The method further includes using a second maskto form a complete top electrode coupled to a second interconnectof the top metal level

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Addison, TX, United States of America

Rose Alyssa Keagy