Stmicroelectronics S.r.l.

Consiglio Nazionale Delle Ricerche

Rosario Corrado Spinella

Giuseppe D'Arrigo

Salvatore Coffa

Salvatore Lombardo

Simona Lorenti

Sebania Libertino

Rosaria Anna Puglisi

Guiseppe Arena

Manuela Fichera

Alessio M D'arrigo Guiseppe

A nanometric device is disclosed for the measurement of the electrical conductivity of individual molecules and their quantum effects having: a substrate surmounted by, in order, a barrier to diffusion layer, an electrically conductive layer, a 'bounder' layer and an electrically insulating layer; and a suitable miniaturized probe; wherein the 'bounder' layer and the electrically insulating layer have at least one nanometric pore formed within, the base of which consists of the electrically conductive layer. A method for the production of a nanometric device for the measurement of the electrical conductivity of individual molecules and their quantum effects, and a method for the measurement of the electrical conductivity and quantum effects of a molecule of interest, are also disclosed.

Nanometric device for the measurement of the conductivity and quantum effects of individual molecules and methods for the manufacture and use thereof

A method is provided for fabricating a semiconductor device that includes a suspended micro-system. According to the method, a silicon porous layer is formed above a silicon substrate, and the silicon porous layer is oxidized. An oxide layer is deposited, and a first polysilicon layer is deposited above the oxide layer. The first polysilicon layer, the oxide layer, and the silicon porous layer are selectively removed. A nitride layer is deposited, and a second polysilicon layer is deposited. The second polysilicon layer, the nitride layer, the first polysilicon layer, and the oxide layer are selectively removed. The silicon porous layer is removed in areas made accessible by the previous step. Also provided is a semiconductor device that includes a suspended structure fixed to at least two walls through a plurality of hinges, with the suspended structure including an oxide layer, a first polysilicon layer, a nitride layer, and a second polysilicon layer.

Semiconductor device having a suspended micro-system

Process for fabricating a semiconductor device having a suspended micro-system and resultant device

A process is presented for realizing buried microchannels () in an integrated structure () comprising a monocrystalline silicon substrate (). The process forms in the substrate () at least one trench (). A microchannel () is obtained starting from a small surface port of the trench () by anisotropic etching of the trench. The microchannel () is then completely buried in the substrate () by growing a microcrystalline structure to enclose the small surface port.

Method for realizing microchannels in an integrated structure

A fuel cell for an electrical load circuit includes a first monocrystalline silicon substrate and a positive half-cell formed therein, and a second monocrystalline silicon substrate and a positive half-cell formed therein. Each half-cell includes a microporous catalytic electrode permeable to a gas and connectable to the electrical load circuit. A cell area is defined on a surface of each respective monocrystalline silicon substrate, and includes a plurality of parallel trenches formed therein for receiving the gas to be fed to the respective microporous catalytic electrode. A cation exchange membrane separates the two microporous catalytic electrodes. Each half-cell includes a passageway for feeding the respective gas to the corresponding microporous catalytic electrode.

Micro silicon fuel cell, method of fabrication and self-powered semiconductor device integrating a micro fuel cell

Growing community of inventors

Catania, Italy

Rosario Corrado Spinella