Azur Space Solar Power Gmbh

Rosalinda Van Leest

Matthias Meusel

Daniel Fuhrmann

Gregor Keller

Alexander Berg

Lilli Horst

A stacked monolithic upright metamorphic multijunction solar cell, comprising at least one first subcell having a first band gap, a first lattice constant and being made up of germanium by more than 50%, a second subcell, which is disposed above the first subcell and has a second band gap and a second lattice constant, a metamorphic buffer disposed between the first subcell and the second subcell, including a sequence of at least three layers having lattice constants which increase from layer to layer in the direction of the second subcell, and a first tunnel diode, which is situated between the metamorphic buffer and the second subcell and which has an nlayer and a player, the second band gap being larger than the first band gap, the nlayer of the first tunnel diode comprising InAlP, the player of the first tunnel diode comprising an As-containing III-V material.

Stacked monolithic upright metamorphic multijunction solar cell

A stacked monolithic multijunction solar cell, which includes a first subcell having a p-n junction with an emitter layer and a base layer, the thickness of the emitter layer being less than the thickness of the base layer at least by a factor of ten, and the first subcell comprising a substrate having a semiconductor material from the groups III and V or a substrate from the group IV, and which further includes a second subcell arranged on the first subcell and a third subcell arranged on the second subcell, the two subcells each including an emitter layer and a base layer, and a tunnel diode and a back side field layer each being formed between the subcells, the thickness of the emitter layer being greater than the thickness of the base layer in each case between the second subcell and in the third subcell.

Stacked monolithic multijunction solar cell

A stacked multi-junction solar cell with a first subcell having a top and a bottom, and with a second subcell. The first subcell is implemented as the topmost subcell so that incident light first strikes the top of the first subcell and after that strikes the second subcell through the bottom. A first tunnel diode is arranged between the bottom of the first subcell and the second subcell. A window layer is arranged on the top of the first subcell, and the band gap of the window layer is larger than the band gap of the first subcell. A cover layer is arranged below metal fingers and above the window layer, and an additional layer is arranged below the cover layer and above the window layer. A thickness of the additional layer is less than the thickness of the window layer.

Growing community of inventors

Heilbronn, Germany

Rosalinda Van Leest