Stmicroelectronics S.a.

Rosalia Germana

Sandra Mattei

The invention relates to an integrated CMOS circuit comprising, in a semiconductor substrate () with a first type of conductivity, a casing () of a second type of retrograde-doped conductivity, the end of said casing being covered by an inter-casing insulating region (). The components contained in said casing are separated from each other by means of intra-casing insulating regions (). The first insulating elements () of the second type of high-level doping conductivity extend under each intra-casing insulating region. A second region () of the second type of high-level doping conductivity partially extends under the inter-casing insulator beyond the periphery of each casing.

High-voltage integrated CMOS circuit

A MOS power transistor formed in an epitaxial layer of a first conductivity type, the MOS power transistor being formed on the front surface of a heavily-doped substrate of the first conductivity type, including a plurality of alternate drain and source fingers of the second conductivity type separated by a channel, conductive fingers covering each of the source fingers and of the drain fingers, a second metal level connecting all the drain metal fingers and substantially covering the entire source-drain structure. Each source finger includes a heavily-doped area of the first conductivity type in contact with the epitaxial layer and with the corresponding source finger, and the rear surface of the substrate is coated with a source metallization.

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Antibes, France

Rosalia Germana