International Business Machines Corporation

Rosa A Orozco-Teran

Ravikumar Ramachandran

John Anthony Fitzsimmons

David Lee Rath

Russell Herbert Arndt

Embodiments of present invention provide a method of forming a semiconductor structure. The method includes forming a semiconductor structure having a first metal layer and a plurality of dielectric layers on top of the first metal layer; creating one or more openings through the plurality of dielectric layers to expose the first metal layer underneath the plurality of dielectric layers; causing the one or more openings to expand downward into the first metal layer and expand horizontally into areas underneath the plurality of dielectric layers; applying a layer of lining material in lining sidewalls of the one or more openings inside the plurality of dielectric layers; and filling the expanded one or more openings with a conductive material.

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Wappingers Falls, NY, United States of America

Rosa A Orozco-Teran