Siemens Aktiengesellschaft

Volkswagen Ag

Ronny Werner

Stefan Pfefferlein

Stefan Stegmeier

Markus Pfeifer

Stephan Neugebauer

Javier Bartolome

Roland Lorz

Felix Zeyss

Erik Weisbrod

Markus Lasch

Peter Alberti

Michael Greiner

Jasper Kammeyer

Simon Frerichs

Marcus Kleinen

Oliver Hinrichs

An arrangement for a semiconductor arrangement includes a substrate including a dielectric material layer and a first metallization arranged on the dielectric material layer. A passive component is arranged completely in a cutout of the first metallization and bears directly on the dielectric material layer. The passive component is designed to include a first profile. The the first metallization includes a second profile in a region of contacting with the passive component, with the first and second profiles engaging with one another.

Arrangement for a semiconductor arrangement comprising at least one passive component and a substrate

A semiconductor module includes a substrate composed of electrically insulating material. A structured metal layer for contact with an electrical component is applied to a top side of the substrate. The structured metal layer is applied to the substrate only in a central region of the substrate, so that an edge region which surrounds the central region and in which the structured metal layer is not applied to the substrate remains on the top side of the substrate. A contact layer for making contact with a cooling body is situated opposite the structured metal layer and applied to a bottom side of the substrate in the central region. A structured supporting structure is further applied to the bottom side of the substrate in the edge region and has a thickness which corresponds to a thickness of the contact layer.

Semiconductor module with a supporting structure on the bottom side

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Nürnberg, Germany

Ronny Werner