Infineon Technologies Ag

Infineon Technologies Austria Ag

Ronny Kern

Roland Rupp

Francisco Javier Santos Rodriguez

Stefan Krivec

Jens Peter Konrath

Andre Brockmeier

Alexander Breymesser

Ulrich Schmid

Stefan Woehlert

Stefan Kramp

Gregor Langer

Matteo Piccin

Josef Unterweger

Hannes Winkler

Laura Stoeber

Carsten Von Koblinski

Guenter Denifl

Michael Knabl

Hans-Joachim Schulze

Bernhard Goller

Carsten Schaeffer

A chip is provided. In an embodiment, the chip includes a silicon carbide substrate, a first sputtered metal layer on the silicon carbide substrate, and at least one second sputtered metal layer on the first sputtered metal layer. The first sputtered metal layer and the at least one second sputtered metal layer form an electrical contact. In another embodiment, the chip includes a silicon carbide substrate, a nickel-silicon layer on the silicon carbide substrate, and a layer sequence including a titanium layer, a nickel-containing layer, and a gold-tin or silver layer on the nickel-silicon layer.

Chip with a silicon carbide substrate

A method for producing a silicon carbide component includes forming a silicon carbide layer on an initial wafer, wherein the silicon carbide layer comprises a doping region to be produced, forming an electrically conductive contact structure on the surface of the silicon carbide layer, the electrically conductive contact structure, producing a splitting region by pre-damaging the splitting region, wherein the splitting region is produced by laser treating the splitting region before forming the electrically conductive contact, splitting the silicon carbide layer or the initial wafer along the splitting region such that a silicon carbide substrate of the silicon carbide component to be produced is split off, wherein the silicon carbide substrate has a thickness of more than 30 μm, wherein the doping region extends to a surface of the silicon carbide layer before splitting the silicon carbide layer, and wherein splitting along comprises applying a polymer film.

Silicon carbide components and methods for producing silicon carbide components

A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.

Method of manufacturing a semiconductor device having frame structures laterally surrounding backside metal structures

A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.

Process for producing an electrical contact on a silicon carbide substrate

A method for producing a silicon carbide component includes forming a silicon carbide layer on an initial wafer, forming a doping region of the silicon carbide component to be produced in the silicon carbide layer, and forming an electrically conductive contact structure of the silicon carbide component to be produced on a surface of the silicon carbide layer. The electrically conductive contact structure electrically contacts the doping region. Furthermore, the method includes splitting the silicon carbide layer or the initial wafer after forming the electrically conductive contact structure, such that a silicon carbide substrate at least of the silicon carbide component to be produced is split off.

A method for forming semiconductor devices includes attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices. The method further includes forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure.

Semiconductor package devices and method for forming semiconductor package devices

An auxiliary carrier and a silicon carbide substrate are provided. The silicon carbide substrate includes an idle layer and a device layer between a main surface at a front side of the silicon carbide substrate and the idle layer. The device layer includes a plurality of laterally separated device regions. Each device region extends from the main surface to the idle layer. The auxiliary carrier is structurally connected with the silicon carbide substrate at the front side. The idle layer is removed. A mold structure is formed that fills a grid-shaped groove that laterally separates the device regions. The device regions are separated, and parts of the mold structure form frame structures laterally surrounding the device regions.

Semiconductor device and method of manufacturing a semiconductor device

According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.

A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a chemical cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.

Electrical contact connection on silicon carbide substrate

A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.

Method for manufacturing a semiconductor device having a Schottky contact

A wafer carrier comprises a first foil, a second foil, and a chamber between the first and the second foil. The first foil has a perforation and is used for carrying the wafer. The first and the second foil are connected to each other so as to form the chamber. The chamber is configured to be evacuated to form a vacuum in the chamber, the vacuum causes an underpressure at the perforation, the underpressure forms a carrying force to the wafer to be carried.

Wafer carrier, method for manufacturing the same and method for carrying a wafer

According to various embodiments, a substrate carrier may include: a substrate-supporting region for supporting a substrate; wherein a first portion of the substrate-supporting region including a pore network of at least partially interconnected pores; wherein a second portion of the substrate-supporting region surrounds the first portion and includes a sealing member for providing a contact sealing; at least one evacuation port for creating a vacuum in the pore network, such that a substrate received over the substrate-supporting region is adhered by suction; and at least one valve configured to control a connection between the pore network and the at least one evacuation port, such that a vacuum can be maintained in the pore network; wherein the pore network includes a first pore characteristic in a first region and a second pore characteristic in a second region different from the first pore characteristic.

Substrate carrier, a processing arrangement and a method

A method of processing a power semiconductor device includes: providing a semiconductor body of the power semiconductor device; coupling a mask to the semiconductor body; and subjecting the semiconductor body to an ion implantation such that implantation ions traverse the mask prior to entering the semiconductor body.

Superjunction structure in a power semiconductor device

According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.

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Finkenstein, Austria

Ronny Kern