Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Semiconductor Manufacturing International Corp.

Rongyao Chang

Haiyang Zhang

Dong Li

Yiying Zhang

Zhuofan Chen

A flash memory device and its manufacturing method, which is related to semiconductor techniques. The flash memory device comprises: a substrate; and a memory unit on the substrate, comprising: a channel structure on the substrate, wherein the channel structure comprise, in an order from inner to outer of the channel structure, a channel layer, an insulation layer wrapped around the channel layer, and a charge capture layer wrapped around the insulation layer; a plurality of gate structures wrapped around the channel structure and arranged along a symmetry axis of the channel structure, wherein there exist cavities between neighboring gate structures; a support structure supporting the gate structures; and a plurality of gate contact components each contacting a gate structure. The cavities between neighboring gate structures lower the parasitic capacitance, reduce inter-gate interference, and suppress the influence from writing or erasing operations of nearby memory units.

Flash memory device and manufacture thereof

The present disclosure is directed to a manufacturing method of a semiconductor device. The manufacturing method includes: providing an initial structure including a to-be-etched material layer and a mask structure located on the to-be-etched material layer, the mask structure including a hydrophilic first mask layer; patterning the mask structure to form a patterned mask structure; etching the to-be-etched material layer by using the patterned mask structure as a mask; performing hydrophobic processing on the first mask layer; and performing cleaning processing. The manufacturing method according to the present disclosure helps to prevent the first mask layer from being adhered or combined during the cleaning processing, thereby resolving the problem that a linear structure collapses.

Manufacturing method of semiconductor device

Growing community of inventors

Shanghai, China

Rongyao Chang