Wuxi China Resources Huajing Microelectronics Co., Ltd.

Wuxi China Resources Huajing Microelectronic Co., Ltd.

Rongsheng Pu

Lei Wang

Guoqi Li

Zhiyan Yu

A manufacturing method of a light-emitting diode device. The light-emitting diode device comprises: a substrate (); an epitaxial layer at one side of the substrate () and comprising an N-type layer (), a P-type layer (), and an active layer () between the N-type layer () and the P-type layer (); an N-type electrode (); a P-type electrode (); an adhesive layer (); and a patterned substrate (). The light-emitting diode device further comprises an insulating layer () between the N-type electrode () and the P-type electrode (), the insulating layer () electrically insulating the N-type electrode () and the P-type electrode (). In the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.

Manufacturing method of a light-emitting device having a patterned substrate

A light-emitting diode device and a manufacturing method thereof. The light-emitting diode device includes: a substrate (); an epitaxial layer at one side of the substrate () and including an N-type layer (), a P-type layer (), and an active layer () between the N-type layer () and the P-type layer (); an N-type electrode (); a P-type electrode (); an adhesive layer (); and a patterned substrate (). The light-emitting diode device further includes an insulating layer () between the N-type electrode () and the P-type electrode (), the insulating layer () electrically insulating the N-type electrode () and the P-type electrode (). In the light-emitting diode device and the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.

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Jiangsu, China

Rongsheng Pu