Boe Technology Group Co., Ltd.

Chongqing Boe Optoelectronics Technology Co., Ltd.

Rongge Cui

Jaemoon Chung

Chao Fan

Dongzhen Jin

The present application discloses a thin film transistor including a base substrate; an active layer on the base substrate having a first semiconductor region, a second semiconductor region, and a plurality of semiconductor bridges each of which connecting the first semiconductor region and the second semiconductor region; the plurality of semiconductor bridges spaced apart from each other; the active layer being made of a material including M1ON, wherein M1 is a single metal or a combination of metals, a&#x3e;0, and b&#x2265;0; an etch stop layer on a side of the active layer distal to the base substrate; the first semiconductor region having a first non-overlapping portion, a projection of which is outside that of the etch stop layer in plan view of the base substrate; the second semiconductor region having a second non-overlapping portion, a projection of which is outside that of the etch stop layer in plan view of the base substrate; a first electrode on a side of the first non-overlapping portion distal to the base substrate; and a second electrode on a side of the second non-overlapping portion distal to the base substrate.

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Beijing, China

Rongge Cui