Taiwan Semiconductor Manufacturing Comp. Ltd.

Rong-Yu Wu

Yi-Wei Chiu

Li-Te Hsu

Ying-Ting Hsia

Jen-Chih Hsueh

Tsung-Fan Yin

A method for forming a semiconductor device structure is provided. The method includes forming a spacer layer and a dielectric layer over a substrate. The spacer layer has an opening exposing the substrate, and the dielectric layer surrounds the spacer layer. The method includes forming a metal silicon nitride layer over a sidewall and a bottom surface of the opening. The method includes forming a first work function metal layer over the metal silicon nitride layer. The method includes removing a first top portion of the first work function metal layer. The method includes, after the removal of the first top portion, removing a second top portion of the metal silicon nitride layer. The method includes forming a conductive layer in the opening. The method includes removing a third top portion of the conductive layer and a fourth top portion of the metal silicon nitride layer.

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Hsinchu, Taiwan

Rong-Yu Wu