United Epitaxy Company, Inc.

Industrial Technology Research Institute

Rong-Yih Hwang

Tzer-Perng Chen

Charng-Shyang Jong

Jung-Tsung Hsu

Cheng-Chung Young

Hung-Pin Yang

Huey-Fen Liu

A structure of a light emitting diode (LED) and a method of making the same are disclosed. The present invention is suitable for the light emitting diode having the area that is larger than 100 mil and having the insulating substrate, and is featured in that the P electrode and the N electrode are mutually intercrossed. With the use of the present invention, the light emitted by each individual unit chip is more even; the operating voltage of the device is reduced; the cut size of the device can be enlarged arbitrarily according to the size of the unit chip; and the light emitting efficiency is increased.

Structure of a light emitting diode and method of making the same

A method for cutting Group III nitride semiconductor light emitting element comprises the step of discharge-etched on a front face of a chip or cutting channel of a substrate; and breaking on a back surface of the discharge-etching face to be formed with dies. This method is different from the prior art dicing saw and point scribe. Thus, the cutting time is shortened. The consumption of the diamond knife from cutting is reduced. The yield ratio of dies is improved and the outlook is also improved.

Method for cutting group III nitride semiconductor light emitting element

A semiconductor light emitting device has a transparent substrate, an n-type semiconductor layer, a p-type semiconductor layer, an n-type transparent electrode, a p-type transparent electrode, an n-type bonding pad, and a p-type bonding pad. The n-type semiconductor layer is disposed over the transparent substrate. The p-type semiconductor layer and the n-type transparent electrode are provided on the n-type semiconductor layer and arranged alternatively to each other, where the p-type semiconductor layer and the n-type transparent electrode cover different portions of the n-type semiconductor layer respectively. The p-type transparent electrode is provided in contact with the p-type semiconductor layer. The n-type and p-type bonding pads are disposed on the n-type and p-type transparent electrodes respectively, and the areas of these bonding pads are smaller than the area of the corresponding electrodes.

Semiconductor light emitting device

An LED package assembly comprising two or more light emitting diode dies within an epoxy housing such that a wider light emitting angle with a higher light intensity everywhere around the package including its bottom part is obtained. The LED package can be a substitute for bulb illumination or serving some decorative functions. Furthermore, the LED has low power consumption, a tough body and a long working life. Moreover, a cluster of these LEDs in a large display screen is capable of enhancing clarity of vision and the range of observation from a few meters to a few kilometers away.

Growing community of inventors

Hsinchu, Taiwan

Rong-Yih Hwang