Epistar Corporation

National Applied Research Laboratories

Rong-Ren Lee

Shih-Chang Lee

Yi-Chieh Lin

Yi-Ching Lee

Ming-Siang Huang

Chun-Yu Lin

Shih-I Chen

Yu-Ren Peng

Meng-Yang Chen

Cheng-Long Yeh

Chih-Chiang Lu

Jen-Inn Chyi

Ta-Cheng Hsu

Hsin-Chih Chiu

Kuo-Feng Huang

Hao-Min Ku

Yung-Fu Chang

Ching-Yuan Tsai

You-Hsien Chang

Shih-Pang Chang

Szu-Hung Chen

Ming-Ta Chin

Wen-Kuan Yeh

Guang-Li Luo

Kuan-Chih Kuo

Chih-Hung Hsiao

Ming-Tzung Liou

Chien-Fu Huang

Tzu-Chieh Hsu

Wen-Luh Liao

Hsin-Chan Chung

Chih-Peng Ni

Cheng-Hong Chen

Min-Hsun Hsieh

Yi-Ming Chen

Wu-Tsung Lo

Shiuan-Leh Lin

Tsen-Kuei Wang

Yu-Chih Yang

Tsung-Hsien Liu

Yung-Szu Su

A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

Heterogeneously integrated semiconductor device and manufacturing method thereof

A semiconductor substrate is provided in the present disclosure. The semiconductor substrate includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer has a first lattice constant (L1) and the second semiconductor layer has a second lattice constant (L2). A ratio of a difference (L2-L1) between the second lattice constant (L2) and the first lattice constant (L1) to the first lattice constant (L1) is greater than 0.036.

Semiconductor substrate

An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.

Optoelectronic device and the manufacturing method thereof

A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.

A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.

Light-emitting device with tunnel junction

An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.

A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.

Semiconductor light-emitting device

A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 &#x3bc;m, and the thickness of the lower semiconductor stack is small than or equal to 1 &#x3bc;m.

Light-emitting diode

This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa(&#x2212;x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction.

Tandem solar cell

The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating from each other and formed of semiconductor material.

A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.

A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength &#x3bb; nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8&#x3bb;) volt and (1240/0.5&#x3bb;) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.

Light-emitting device and method for manufacturing the same

A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength &#x3bb; nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8&#x3bb;) volt and (1240/0.5&#x3bb;) volt.

Growing community of inventors

Hsinchu, Taiwan

Rong-Ren Lee