Vanguard International Semiconductor Corporation

Rong-Gen Wu

Chih-Ming Kao

Yu-Chun Ho

Yi-Tsung Jan

Chun-Hsu Chen

Huan-Yu Chien

Ting-Yu Kuo

Peng-Fei Wu

Su-Chen Lin

You-Cheng Liau

Han-Wen Chang

Wen-Jen Chuang

A method of fabricating a semiconductor structure includes providing a semiconductor substrate, forming a trench in the semiconductor substrate, overfilling the trench with a first semiconductor material, wherein the first semiconductor material does not have a dopant, forming a second semiconductor material on the first semiconductor material, wherein the second semiconductor material contains a dopant, and performing a thermal treatment so that the dopant in the second semiconductor material diffuses into the first semiconductor material to form a doped third semiconductor material in the trench.

Semiconductor structures and methods of forming the same

A method for manufacturing a contact plug is provided. The method includes providing a silicon substrate having at least one opening. A titanium layer is conformably formed in the opening. A first barrier layer is conformably formed on the titanium layer in the opening. A rapid thermal process is performed on the titanium layer and the first barrier layer. After performing the rapid thermal process, a second barrier layer is conformably formed on the first barrier layer in the opening.

Contact plug and method for manufacturing the same

Growing community of inventors

Taichung, Taiwan

Rong-Gen Wu