H.c. Starck Gmbh

Rong-Chein Richard Wu

Prabhat Kumar

Steven Alfred Miller

Gary Alan Rozak

Mark E Gaydos

Leonid Natan Shekhter

Norman C Mills

Leah F Haywiser

Shuwei Sun

Henry F Breit

Peter R Jepson

David Meendering

Brad Lemon

Timothy Welling

Steve Miller

Charles Wood

David G Schwarz

Glen Zeman

John A Shields

Charles B Wood

James G Iii Daily

Jerone O´Grady

Molybdenum titanium sputter targets are provided. In one aspect, the targets are substantially free of the &#x3b2;(Ti, Mo) alloy phase. In another aspect, the targets are substantially comprised of single phase &#x3b2;(Ti, Mo) alloy. In both aspects, particulate emission during sputtering is reduced. Methods of preparing the targets, methods of bonding targets together to produce large area sputter targets, and films produced by the targets, are also provided.

Methods of making molybdenum titanium sputtering plates and targets

The present invention is directed to a process for producing high density, refractory metal products via a press/sintering process. The invention is also directed to a process for producing a sputtering target and to the sputtering target so produced.

High density refractory metals and alloys sputtering targets

In various embodiments, low-oxygen metal powder is produced by heating a metal powder to a temperature at which an oxide of the metal powder becomes thermodynamically unstable and applying a pressure to volatilize the oxygen.

Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof

The present invention is directed to a process for the preparation of a metal powder having a purity at least as high as the starting powder and having an oxygen content of 10 ppm or less comprising heating said metal powder containing oxygen in the form of an oxide, with the total oxygen content being from 50 to 3000 ppmf in an inert atmosphere at a pressure of from 1 bar to 10to a temperature at which the oxide of the metal powder becomes thermodynamically unstable and removing the resulting oxygen via volatilization. The metal powder is preferably selected from the group consisting of tantalum, niobium, molybdenum, hafnium, zirconium, titanium, vanadium, rhenium and tungsten. The invention also relates to the powders produced by the process and the use of such powders in a cold spray process.

The present invention is directed to a composition consisting essentially of:

Tin oxide-based sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein

A substrate for semiconductor and integrated circuit components including: The substrate can be used in electronic devices, which can also include one or more semiconductor components.

Refractory metal substrate with improved thermal conductivity

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Chelmsford, MA, United States of America

Rong-Chein Richard Wu