Vishay-siliconix

Siliconix Incorporated

Ronald Wong

Deva N Pattanayak

Kyle Terrill

Kuo-In Chen

Robert Xu

Kam Hong Lui

Yuming Bai

Jason (Jianhai) Qi

Kam-Hong Lui

King Owyang

Qufei Chen

Reuven Katraro

Mohammed Kasem

Calvin Choi

Jason Qi

Mohamed N Darwish

Frederick Perry Giles

Christiana Yue

David Chang

Ben Chan

Robert Q Xu

A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

Semiconductor device with trench-like feed-throughs

A structure includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector includes aluminum. A surface of the insulator and a surface of the electrical contact form a substantially even surface.

Power MOSFET contact metallization

Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.

Stacked trench metal-oxide-semiconductor field effect transistor device

Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.

Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistor

Drain side gate trench metal-oxide-semiconductor field effect transistor

A trench MOSFET is formed by creating a trench in a semiconductor substrate, then forming a barrier layer over a portion of the side wall of the trench. A thick insulating layer is deposited in the bottom of the trench. The barrier layer is selected such that the thick insulating layer deposits in the bottom of the trench at a faster rate than the thick insulating layer deposits on the barrier layer. Embodiments of the present invention avoid stress and reliability problems associated with thermal growth of insulating layers, and avoid problems with control of the shape and thickness of the thick insulating layer encountered when a thick insulating layer is deposited, then etched to the proper shape and thickness.

Thicker oxide formation at the trench bottom by selective oxide deposition

Growing community of inventors

Millbrae, CA, United States of America

Ronald Wong