Avago Technologies Enterprise IP (singapore) Pte. Ltd.

Avago Technologies General IP (singapore) Pte. Ltd.

Ronald William Kee

David Winslow Niles

J Ken Patterson

Marcus Mims

A method for forming a solid immersion lens (SIL) includes generating a focused ion beam, and projecting the focused ion beam onto an optical medium at locations defined by a binary bitmap milling pattern, wherein the locations at which the focused ion beam impact a surface of the optical medium are randomized over successive raster scans of the surface of the optical medium to form at least a portion of a hemispherical structure in the optical medium.

Apparatus and method for forming a solid immersion lens using a binary bitmap milling pattern

A test system includes a computer and an interface device for accessing a scan chain on an application specific integrated circuit (ASIC) under test. The computer includes a memory that contains application software that when executed by the computer quantifies soft errors and soft error rates (SER) in storage elements on the ASIC. The interface device receives commands and data from the computer, translates the commands and data from a first protocol to a second protocol and communicates the commands and data in the second protocol to the ASIC. A method for measuring SER in the ASIC includes baseline, comparison, and latch up accesses of data in a scan chain in the ASIC. Between accesses, the ASIC is exposed to a neutron flux that accelerates the occurrence of soft errors due to ionizing radiation upon the ASIC.

Systems and methods for measuring soft errors and soft error rates in an application specific integrated circuit

A system for accessing circuitry on a flip chip circuit device with active circuitry and full-thickness bulk silicon includes a moveable surface for supporting and locating the circuit device in a plane, an infrared (IR) imaging device located at a defined perpendicular distance from a surface of the bulk silicon, the surface of the bulk silicon parallel to the plane and a milling chamber configured to direct an etchant and a focused ion beam to the surface of the bulk silicon, resulting in a gas-enhanced milling process that creates a milled cavity in the bulk silicon. The system produces an IR reflective material located at a base of the cavity, wherein the circuit device is located within a field of view of the IR imaging device such that the IR reflective material is brought into focus by moving the IR imaging device an adjustable distance perpendicular to the surface of the bulk silicon, and where the adjustable perpendicular distance is indicative of a depth of the cavity.

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Fort Collins, CO, United States of America

Ronald William Kee