Motorola Corporation

Ronald W Slocumb

Curtis D Moyer

Craig A Gaw

Arumugam Satyanarayan

Kwong-Hang Leung

An optical semiconductor device is formed by using one controlled etch to form a 'T' shaped contact structure on the device (20). The etch rate is controlled by judicious selection of materials to provide a cladding layer (17) that has a predetermined etch rate in hydrofluoric acid, a support layer (10) and a contact layer (18) that are not affected by hydrofluoric acid, a lift-off layer (19) that is dissolved by hydrofluoric acid, and a barrier layer (21). Dissolving of the lift-off layer (19) facilitates removing the barrier layer (21).

Method of forming a light emitting diode

A thin layer of liquid phase epitaxial melt material (26) is formed on a wafer (15,16). The thin melt layer (26) is held in contact with the wafer (15,16) while the temperature of the thin melt layer (26) and the wafer (15,16) are reduced to crystallize a portion of the melt material thereby producing thin and accurately controlled epitaxial layers on the wafer (15,16).

Growing community of inventors

Scottsdale, AZ, United States of America

Ronald W Slocumb