USA As Represented by Secretary of the Navy

Ronald T Holm

Richard L Henry

Charles R Eddy, Jr

Martin C Peckerar

Mark E Twigg

Daniel D Koleske

Alma E Wickenden

David Kurt Gaskill

Edward J Cukauskas

Alan D Berry

Arnold H Singer

Raphael Kaplan

This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

Technique for perfecting the active regions of wide bandgap semiconductor nitride devices

This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

A new technique of optical bandgap thermometry allows one to accurately measure the temperature of semiconductor samples by using the temperature dependent reflective properties of the samples. The disclosed technique uses specular reflection at an oblique angle of incidence. Light from a light source such as quartz halogen lamp is chopped and focused by a lens. The light then is focused onto the sample at an oblique angle of incidence. The light is specularly reflected by the sample and is focused by a lens into a spectrometer. The spectrometer is used to determine the spectrum of the light reflected from the sample. The reflectance varies with temperature and the temperature of the sample is calculated as a function of the reflectance spectrum.

Specular reflection optical bandgap thermometry

A CVD process for forming a layer or layers of superconducting materials on a semiconductor substrate in which volatile organometallic compounds of bismuth, strontium, calcium and copper are heated in the presence of a carrier gas in a first chamber free of hydrolyzing agents. Under conditions free of hydrolyzing agents, the carrier gas transports a predetermined quantity of the volatile organometallic compounds of the bismuth, strontium, calcium and copper to a deposition chamber. The compounds are decomposed and deposit mixed oxides on the substrate. Subsequent to deposition of the mixed oxides of the desired elements the layer is sintered in an oxygen-rich atmosphere, and formed into a superconducting film by subsequent slow cooling still in an oxygen-rich atmosphere.

Formation of superconducting Bi-Sr-Ca-Cu-O films by organometallic

Reduction of light reflections in substrate modes. The use of absorbing multilayer thin-film light interference coatings on the backside of a LiNbO.sub.3 substrate provides an optical system which substantially reduces reflected substrate modes in integrated optical spectrum analyzers at around 8300 A wavelength, or at other selected wavelengths, over a broad range of incident angles by selection of individual film thickness and optical constants.

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Alexandria, VA, United States of America

Ronald T Holm