Other

Candescent Technologies Corporation

Advanced Technology Materials, Inc.

Silicon Video, Inc.

Candescent Intellectual Property Services, Inc.

Ronald S Besser

Robert M Duboc

Christopher J Spindt

George R Brandes

Xueping Xu

Charles P Beetz

Swayambu V Ramani

James C Dunphy

Duane A Haven

Kishore K Chakravorty

Christopher J Curtin

Stephanie Jeanne Oberg

Arthur J Learn

Roger W Barton

John E Field

Lawrence S Pan

David R Morris

Donald R Schropp, Jr

Johan Knall

Swayambu Ramani

Paul J Louris

A low-contaminant dual layer apparatus adapted for use in a flat panel display device is described. The apparatus includes a dual layer electroplated structure for containing the movement of electrons. The electroplated structure resides within an active region of the flat panel display device. The electroplated structure has a cavity adapted to having sub-pixel forming material deposited within and contains substantially no organic material.

Dual layer electroplated structure for a flat panel display device

An electroplated structure for a field emission display device and method for forming an electroplated structure for a field emission display device. In one embodiment, the present invention forms a molded structure over selected portions of a flat panel display device. Next, the present embodiment deposits an electroplating seed layer over the molded structure. After the deposition of the electroplating seed layer, the present embodiment electroplates material onto portions of the electroplating seed layer such that an electroplated structure is formed at desired regions of the flat panel display device. In such an embodiment, the present invention provides an electroplated structure which contains substantially no polyimide material. As a result, the present embodiment eliminates the cost and production of outgassed contaminants associated with prior art structures.

Electroplated structure for a flat panel display device

A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a emitter electrode metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form emitter electrode metal gives emitter electrode metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer. Electrode structures that use resistor material, chromium-containing material, nickel and vanadium alloy, and gold are also disclosed.

Dual-layer metal for flat panel display

The intensity at which electrons emitted by a first plate structure ( ) in a flat-panel display strike a second plate structure ( ) for causing it to emit light is controlled so as to reduce image degradation that could otherwise arise from undesired electron-trajectory changes caused by effects such as the presence of a spacer system ( ) between the plate structures. An electron-emissive region ( ) in the first plate structure typically contains multiple laterally separated electron-emissive portions ( and ) for selectively emitting electrons. An electron-focusing system in the first plate structure has corresponding focus openings ( P and P ) through which electrons emitted by the electron-emissive portions respectively pass. Upon being struck by the so-emitted electrons, a light-emissive region ( ) in the second plate structure emits light to produce at least part of a dot of the display's image.

Flat-panel display with intensity control to reduce light-centroid shifting

Integrated circuits, including field emission devices, have a resistor element of amorphous Si,C,wherein 0<x<1, and wherein the Si,C,incorporates at least one impurity selected from the group consisting of hydrogen, halogens, nitrogen, oxygen, sulphur, selenium, transition metals, boron, aluminum, phosphorus, gallium, arsenic, lithium, beryllium, sodium and magnesium.

Integrated circuit devices and methods employing amorphous silicon carbide resistor materials

Integrated circuits, including field emission devices, have a resistor element of amorphous Si.sub.x C.sub.1-x wherein 0&lt;x&lt;1, and wherein the Si.sub.x C.sub.1-x incorporates at least one impurity selected from the group consisting of hydrogen, halogens, nitrogen, oxygen, sulphur, selenium, transition metals, boron, aluminum, phosphorus, gallium, arsenic, lithium, beryllium, sodium and magnesium.

Integrated circuit devices and methods employing amorphous silicon

Growing community of inventors

Ruston, LA, United States of America

Ronald S Besser