Morgan Chemical Products, Inc.

Other

Morgan Advanced Ceramics Limited

Ronald R Petkie

Peter R Bossard

David S Hoover

Cooling systems for microprocessors are addressed. Some systems may include a chemical vapor deposited (CVD) diamond heatspreader mounted to a base of a heat sink and to a microprocessor chip, while others may include a copper insert mounted within a depression of a heat sink, with the CVD diamond heatspreader mounted within an indent of the insert.

CVD diamond enhanced microprocessor cooling system

A hydrogen purification system and method that utilizes a hydrogen separator with a novel composite structure. The hydrogen separator has a first porous layer of a hydrogen permeable material, such as a palladium alloy. A solid layer of the same hydrogen permeable material is then disposed onto the first porous layer. A pressure differential is created across the structure of the composite hydrogen separator. The porous layer of hydrogen permeable material supports the solid layer and enables the solid layer to withstand large pressure differentials. Furthermore, the porous layer of the hydrogen permeable material bonds to the solid layer, thereby greatly increasing the effective surface area of the solid layer that is exposed to hydrogen gas. Accordingly, a large flow rate of hydrogen gas can be obtained in a small amount of space.

Composite structure for high efficiency hydrogen separation and its associated methods of manufacture and use

A multilayer brazeable metallization structure for diamond components and method for producing it are described. The brazeable metallization finds particular application for the attachment of diamond components such as heat spreaders in electronic packages that incorporate high power semiconductor devices. In the present invention, a diamond component is provided with a multilayer coating of metals including depositing a first layer of chromium for adhesion onto at least a portion of the diamond component, depositing a second barrier layer of a refractory metal for a barrier onto at least portion of the chromium layer, and a top layer of copper, silver or gold for wetting. This top layer is thick (greater than 5 microns), without sacrificing resistance to delamination, particularly at brazing conditions. It is obtained by depositing a layer of a first metal onto at least a portion of the refractory metal layer, and depositing a layer of a second metal onto at least a portion of the first metal layer. The refractory metals for the barrier layer include tungsten, molybdenum, tantalum, niobium, or tungsten-chromium alloy. This multilayer metallization structure provides a robust interface between diamond and standard brazing alloys which are used to join the diamond to electrical leads or a flange made of metals such as copper-tungsten. The interfacial adhesion between the metallization and the diamond is sufficient to withstand exposure to brazing at temperatures less than or equal to 1,100&deg; C. in inert gas atmospheres that may contain hydrogen.

Methods for preparing brazeable metallizations for diamond components

This invention relates to the nature of thick film compositions that are specifically designed for the fabrication of circuit elements on diamond substrates, especially resistive elements. The nature of diamond sheet material requires special consideration because of its relatively low coefficient of thermal expansion and its sensitivity to oxygen at elevated processing temperatures. The general compositional requirements of thick film paste formulations are provided as a basis for accommodating the particular physical properties of diamond, and thereby establishing a method by which high performance microelectronic components can be fabricated economically. Thick film pastes containing certain borosilicate glasses, metal components, and optionally semiconducting materials are demonstrated to possess favorable behavior in terms of mechanical and electrical properties after sintering. Resistive elements on diamond can be fabricated by adding conductive components to a borosilicate glass.

Thick film paste systems for circuits on diamond substrates

A multilayer brazeable metallization structure for diamond components is described. The brazeable metallization finds particular application for the attachment of diamond components such as heat spreaders in electronic packages that incorporate high power semiconductor devices. In the present invention, a diamond component is provided with a multilayer coating of metals including a first layer of chromium for adhesion, a second barrier layer of a refractory metal for a barrier that may be alloyed with chromium, and a top layer of copper, silver or gold for wetting. The refractory metals for the second layer include tungsten, molybdenum, tantalum and niobium. Tungsten or tungsten-chromium alloy is preferred as the second layer. This multilayer metallization structure provides a robust interface between diamond and standard brazing alloys which are used to join the diamond to electrical leads or a flange made of metals such as copper-tungsten. The interfacial adhesion between the metallization and the diamond is sufficient to withstand exposure to brazing at temperatures less than or equal to 1100&deg; C. in inert gas atmospheres that may contain hydrogen.

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Macungie, PA, United States of America

Ronald R Petkie