Varian Associates, Inc.

Novellus Systems Incorporated

Ronald R Cochran

Vance E Hoffman, Jr

John C Helmer

Young H Park

R Ernest Demaray

Larry D Hartsough

Robert L Anderson

Mingwei Jiang

Richard E Demaray

Geri M Actor

David J Harra

Sputtering apparatus using a collimating filter to limit the angles at which sputtered particles will reach the surface of the substrate or workpiece being processed is shown. The sputtering apparatus relies on a combination of a planar sputter source larger in size than the workpiece and having highly uniform emission characteristics across the much of its surface, including its center; a collimating filter; and low operating pressure to avoid scattering of sputtered atoms after they have passed through the collimation filter. In the preferred embodiment, the collimation filter is made from a material which has substantially the same thermal coefficient of expansion as the film which is deposited on the substrate. In one specific embodiment, a titanium collimation filter is used when the sputtering system is used to deposit films of titanium, titanium nitride or titanium/tungsten alloy.

Collimated deposition apparatus

An internally cooled target assembly for use in a magnetron sputtering apparatus is provided. The internally cooled target assembly includes a cooling plate that is configured to promote highly turbulent coolant flow through the target assembly to achieve efficient and uniform target cooling. The volume of coolant required to cool the target assembly is minimized.

Internally cooled target assembly for magnetron sputtering

Sputtering apparatus and method which are particularly suitable for forming step coatings. A workpiece is supported in a chamber, particles are emitted from a sputter source in a substantially uniform manner throughout an area of greater lateral extent than the workpiece, the pressure within the chamber is maintained at a level which is sufficiently low to prevent substantial scattering of the particles between the source and the workpiece, and the particles are passed through a collimating filter having a plurality of transmissive cells with a length to diameter ratio on the order of 1:1 to 3:1 positioned between the source and the workpiece to limit the angles at which the particles can impinge upon the workpiece.

Collimated deposition apparatus and method

A magnetron sputter source providing a predetermined erosion distribution over the surface of a sputter target material is described. When the distribution is uniform, close coupling of the sputter target with the substrate to be coated is achieved, resulting in improved collection efficiency of the sputtered material by the wafer and improved film thickness uniformity. Elimination of erosion grooves provide for greater target consumption and longer target life. The cathode magnetron sputter source includes a rotating magnet assembly of a specific shape and a specific magnetic strength provides the desired erosion distribution. The target may be dished to improve uniformity near the periphery of the wafer. The resulting magnetron cathode is used for the deposition of thin films. Further applications of uniform magnetron erosion or preselected erosion include uniform or preselected magnetron sputter etch or reactive ion etch and concurrent deposition and etch.

Rotating sputtering apparatus for selected erosion

A bakeable electromagnet assembly is made of coils of metal foil either anodized to insulate between turns or separated by a film of Kapton. Cooling plates connected to a source of cooling fluid are used to remove heat. Heat is conducted from the coils to the cooling plates by a powder which is a heat conductor and electrical insulator such as boron nitride. An external shell made of high magnetic permeability material provides a return path for the magnetic field.

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Mountain View, CA, United States of America

Ronald R Cochran