Asml Holding N.v.

Asml Netherlands B.v.

Ronald Peter Albright

Richard Joseph Bruls

Yang-Shan Huang

Victor Antonio Perez-Falcon

Marcus Adrianus Van De Kerkhof

Patricius Aloysius Jacobus Tinnemans

Johannes Hubertus Josephina Moors

Johannes Henricus Wilhelmus Jacobs

Han-Kwang Nienhuys

Kars Zeger Troost

Andrey Alexandrovich Nikipelov

Peter Conrad Kochersperger

Olav Waldemar Vladimir Frijns

Jason Douglas Hintersteiner

Wenceslao A Cebuhar

Hendrikus Gijsbertus Schimmel

Daniel Nathan Burbank

Bernardo Kastrup

Antonie Hendrik Verweij

Edwin Te Sligte

Zhuangxiong Huang

Manish Ranjan

Nicholas A DeLuca

Lowell Lane Baker

Kursat Bal

Andrew Judge

Jacob Brinkert

Parham Yaghoobi

Daniel Leslie Hall

Jeffrey John Lombardo

Karl Robert Umstadter

Thomas Maarten Raasveld

Eray Uzgören

Vadim Yevgenyevich Joseph Banine

Georgi Nenchev Nenchev

Sjoerd Frans De Vries

An apparatus comprising: a radiation receiving apparatus provided with an opening operable to receive radiation from a radiation source through the opening; wherein the radiation receiving apparatus comprises a deflection apparatus arranged to change a trajectory of a particle through the opening arriving at the radiation receiving apparatus.

Lithographic system provided with a deflection apparatus for changing a trajectory of particulate debris

Methods and systems are described for reducing particulate contaminants on a clamping face of a clamping structure in a lithographic system. A substrate such as a cleaning reticle is pressed against the clamping face. A temperature differential is established between the substrate and the clamping face either before or after clamping occurs to facilitate transfer of particles from the clamping face to the substrate.

Apparatus for and method of in-situ particle removal in a lithography apparatus

Methods and systems are described for reducing particles in the vicinity of an electrostatic chuck () in which a cleaning reticle or substrate () is secured to the chuck, the cleaning reticle or substrate having surfaces partially devoid of conductive material so that an electric field from the chuck can pass through to a volume adjacent the substrate to draw particles () in the volume to the surface of the substrate. Voltage supplied to the chuck may have an alternating polarity to enhance the attraction of particles to the surface.

Designs are provided to reduce the possibility of contaminant particles with a large range of sizes, materials, travel speeds and angles of incidence reaching a particle-sensitive environment. According to an aspect of the disclosure, there is provided an object stage comprising first and second chambers, a first structure having a first surface, and a second structure. The second structure is configured to support an object in the second chamber, movable relative to the first structure. The second structure comprises a second surface opposing the first surface of the first structure thereby defining a gap between the first structure and the second structure that extends between the first chamber and the second chamber. The second structure further comprises a third surface within the first chamber. The object stage further comprises a trap disposed on at least a portion of the third surface, the trap comprising a plurality of baffles.

Particle traps and barriers for particle suppression

Particle trap assemblies configured to reduce the possibility of contaminant particles with a large range of sizes, materials, travel speeds and angles of incidence reaching a particle-sensitive environment. The particle trap may be a gap geometric particle trap located between a stationary part and a movable part of the lithography apparatus. The particle trap may also be a surface geometric particle trap located on a surface of a particle sensitive environment in lithography or metrology apparatus.

Membrane assembly and particle trap

An iterative method of producing optimized setpoint data for controlling the actuation of elements of an array of individually controllable elements in a maskless system and systems therefore. The optimization is based on estimation of a device structure that can utilizes one or more of the following factors: the low-pass characteristics of the projection system, the configuration of the illumination system, and the process window properties.

Lithographic system, device manufacturing method, setpoint data optimization method, and apparatus for producing optimized setpoint data

A method for maintaining a micro-roughness finish after etching chrome from a surface of a calcium fluoride (CaF) object. Etching the chrome a first amount in a first chrome etchant. Etching the chrome a second amount beyond the first predetermined amount in second chrome etchant, such that the CaF2 object maintains a low micro-roughness.

Method to etch chrome deposited on calcium fluoride object

Growing community of inventors

Norwalk, CT, United States of America

Ronald Peter Albright